Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDC655BN, MOSFET

January 2010

FDC655BN Rev.C2

www.fairchildsemi.com

FDC655BN Single N-Channel, Logic Level, PowerTrench

MOSFET

FDC655BN

Single N-Channel, Logic Level, PowerTrench

MOSFET

30 V, 6.3 A, 25 mΩ

Features

 Max r

DS(on)

= 25 mΩ at V

= 10 V, I

= 6.3 A

 Max r

DS(on)

= 33 mΩ at V

= 4.5 V, I

= 5.5 A

 Fast switching

 Low gate charge

 High performance trchnology for extremely low r

DS(on)

 Termination is Lead-free and RoHS Compliant

General Description

This N-Channel Logic Level MOSFET is produced using

Fairchild Semiconductor’s advanced Power

Trench

process

that has been especially tailored to minimize the on-state

resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery

powered applicatoins where low in-line power loss and fast

switching are required.

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 30 V

Gate to Source Voltage ±20 V

-Continuous T

= 25°C (Note 1a) 6.3

-Pulsed 20

Power Dissipation ( Note 1a) 1.6

Power Dissipation (Note 1b) 0.8

, T

STG

Operating and Storage Junction Temperature Range -55 to + 150 °C

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 78 °C/W

Device Marking Device Package Reel Size Tape Width Quantity

.55B FDC655BN SSOT-6

7 ’’ 8 mm 3000 units

Summary of content (5 pages)

PAGE 1
FDC655BN tm Single N-Channel, Logic Level, PowerTrench® MOSFET 30 V, 6.3 A, 25 mΩ Features General Description Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 6.3 A This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 3 V 30 V 25 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA ∆VGS(th) ∆TJ Gate to Source T
PAGE 3
VGS = 10 V VGS = 6 V VGS = 4.5 V ID, DRAIN CURRENT (A) 16 5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 VGS = 3.5 V 12 8 VGS = 3 V 4 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 4 VGS = 3 V 3 VGS = 3.5 V 2 VGS = 4.5 V 1 0 0 0 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 2.0 8 rDS(on), DRAIN TO 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) 90 ID = 6.3 A VGS = 10 V 1.4 12 16 20 Figure 2.
PAGE 4
1000 VGS, GATE TO SOURCE VOLTAGE (V) 10 ID = 6.3 A Ciss CAPACITANCE (pF) 8 VDD = 10 V 6 VDD = 15 V 4 VDD = 20 V Coss 100 Crss 2 f = 1 MHz VGS = 0 V 10 0.1 0 0 2 4 6 8 10 1 Figure 7. Gate Charge Characteristics 1000 P(PK), PEAK TRANSIENT POWER (W) THIS AREA IS LIMITED BY rDS(on) ID, DRAIN CURRENT (A) 30 Figure 8. Capacitance vs Drain to Source Voltage 100 10 1 ms 1 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 0.1 1s Rθ JA = 156 oC/W 10 s DC TA = 25 oC 0.01 0.01 0.
PAGE 5
tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.