Datasheet

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©2010 Fairchild Semiconductor Corporation
FDC655BN Rev.C2
FDC655BN Single N-Channel, Logic Level, PowerTrench
®
MOSFET
Electrical Characteristics T
J
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250 µA, V
GS
= 0 V30 V
∆BV
DSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, referenced to 25°C 25 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V1µA
I
GSS
Gate to Source Leakage Current V
GS
= ±20 V, V
DS
= 0 V ±100nA
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250 µA11.93V
∆V
GS(th)
∆T
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250 µA, referenced to 25°C -5 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10 V, I
D
= 6.3 A 21 25
mΩV
GS
= 4.5 V, I
D
= 5.5 A2633
V
GS
= 10 V, I
D
= 6.3 A, T
J
= 125°C 30 36
g
FS
Forward Transconductance V
DS
= 10 V, I
D
= 6.3 A35S
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1MHz
470 620 pF
C
oss
Output Capacitance 100 130 pF
C
rss
Reverse Transfer Capacitance 60 90 pF
R
g
Gate Resistance 3.0 Ω
t
d(on)
Turn-On Delay Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6 Ω
611ns
t
r
Rise Time 210ns
t
d(off)
Turn-Off Delay Time 15 26 ns
t
f
Fall Time 210ns
Q
g
Total Gate Charge V
GS
= 0 V to 10 V
V
DD
= 15 V,
I
D
= 6.3 A
913nC
Q
g
Total Gate Charge V
GS
= 0 V to 5 V57nC
Q
gs
Gate to Source Charge 1.4 nC
Q
gd
Gate to Drain “Miller” Charge 1.6 nC
I
S
Maximum Continuous Drain-Source Diode Forward Current 1.3 A
V
SD
Source-Drain Diode Forward Voltage V
GS
= 0 V, I
S
= 1.3 A (Note 2) 0.8 1.2 V
t
rr
Reverse Recovery Time
I
F
= 6.3 A, di/dt = 100 A/µs
15 26 ns
Q
rr
Reverse Recovery Charge 4 10 nC
Notes:
1: R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
θJC
is guaranteed by design while R
θCA
is determined by the user’s board design.
a. 78
°C/W when mounted on a 1 in
2
pad of 2 oz copper on FR-4 board.
b. 156 °C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width<300 us, Duty Cycle<2.0%.