Datasheet

April 1999
FDC6561AN
Dual N-Channel Logic Level PowerTrench
TM
MOSFET
General Description Features
Absolute Maximum Ratings T
A
= 25°C unless otherwise note
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage - Continuous ±20 V
I
D
Drain Current - Continuous 2.5 A
- Pulsed 10
P
D
Maximum Power Dissipation (Note 1a) 0.96 W
(Note 1b)
0.9
(Note 1c)
0.7
T
J
,T
STG
Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient (Note 1a) 130 °C/W
R
θ
JC
Thermal Resistance, Junction-to-Case (Note 1) 60 °C/W
FDC6561AN Rev.C
These N-Channel Logic Level MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for all applications where
small size is desireable but especially low cost DC/DC
conversion in battery powered systems.
2.5 A, 30 V. R
DS(ON)
= 0.095 Ω @ V
GS
= 10 V
R
DS(ON)
= 0.145 Ω @ V
GS
= 4.5 V
Very fast switching.
Low gate charge (2.1nC typical).
SuperSOT
TM
-6 package: small footprint (72% smaller than
standard SO-8); low profile (1mm thick).
SOIC-16
SOT-23
SuperSOT
TM
-8
SO-8
SOT-223SuperSOT
TM
-6
D1
S2
G1
D2
S1
G2
SuperSOT -6
TM
pin 1
.561
1
5
3
2
6
4
© 1999 Fairchild Semiconductor Corporation