Datasheet

November 2011
FDC658AP Single P-Channel Logic Level PowerTrench
®
MOSFET
©2011 Fairchild Semiconductor Corporation
FDC658AP Rev. B1
www.fairchildsemi.com1
FDC658AP
Single P-Channel Logic Level PowerTrench
®
MOSFET
-30V, -4A, 50m:
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild's advanced PowerTrench process. It has been
optimized for battery power management applications.
Applications
 Battery management
 Load switch
 Battery protection
 DC/DC conversion
Features
 Max r
DS(on)
= 50 m: @ V
GS
= -10 V, I
D
= -4A
 Max r
DS(on)
= 75 m: @ V
GS
= -4.5 V, I
D
= -3.4A
 Low Gate Charge
 High performance trench technology for extremely low
r
DS(on)
 RoHS Compliant
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain-Source Voltage -30 V
V
GS
Gate-Source Voltage r25 V
I
D
Drain Current - Continuous -4
A
-20
P
D
Maximum Power dissipation 1.6
W
0.8
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
TJA
Thermal Resistance, Junction-to-Ambient 78 °C/W
R
TJC
Thermal Resistance, Junction-to-Case 30 °C/W
Device Marking Device Reel Size Tape Width Quantity
.58A FDC658AP 7inch 8mm 3000 units
PIN 1
SuperSOT
TM
-6
S
D
D
G
D
D
5
1
6
2
3
4
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1)
(Note 1a)
- Pulsed