Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDC658P, MOSFET

February 1999

FDC658P

Single P-Channel, Logic Level, PowerTrench

MOSFET

General Description Features

Absolute Maximum Ratings T

= 25°C unless otherwise note

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage -30 V

GSS

Gate-Source Voltage - Continuous ±20 V

Drain Current - Continuous (Note 1a) -4 A

- Pulsed -20

Maximum Power Dissipation (Note 1a) 1.6 W

(Note 1b)

0.8

STG

Operating and Storage Temperature Range -55 to 150 °C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W

FDC658P Rev.C

This P-Channel Logic Level MOSFET is produced

using Fairchild Semiconductor's advanced

PowerTrench process that has been especially tailored

to minimize the on-state resistance and yet maintain

low gate charge for superior switching performance.

These devices are well suited for notebook computer

applications: load switching and power management,

battery charging circuits, and DC/DC conversion.

-4 A, -30 V. R

DS(ON)

= 0.050 Ω @ V

= -10 V

DS(ON)

= 0.075 Ω @ V

= -4.5 V.

Low gate charge (8nC typical).

High performance trench technology for extremely low

DS(ON)

SuperSOT

-6 package: small footprint (72% smaller than

standard SO-8); low profile (1mm thick).

SOIC-16

SOT-23

SuperSOT

-8

SO-8

SOT-223SuperSOT

-6

SuperSOT -6

.658

Summary of content (5 pages)

PAGE 1
February 1999 FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.
PAGE 2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -30 ∆BVDSS/∆TJ Breakdown Voltage Temp.
PAGE 3
Typical Electrical Characteristics 16 R DS(on) , NORMALIZED - ID , DRAIN-SOURCE CURRENT (A) VGS= -10V -6.0V -4.5V -4.0V 12 -3.5V 8 -3.0V 4 0 0 1 2 3 -VDS , DRAIN-SOURCE VOLTAGE (V) DRAIN-SOURCE ON-RESISTANCE 2 20 1.8 VGS = -4.0 V 1.6 -4.5V 1.4 -6.0V 1.2 -8.0V -10.0V 1 0.8 4 -5.0V 0 4 8 12 - I D , DRAIN CURRENT (A) 16 20 Figure 2. On-Resistance Variation with Figure 1. On-Region Characteristics. Drain Current and Gate Voltage. 0.16 I D = -4A V GS = -10V 1.4 1.2 1 0.8 0.
PAGE 4
Typical Electrical Characteristics (continued) 3000 I D = -4A 8 VDS = -5V -10V CAPACITANCE (pF) -VGS , GATE-SOURCE VOLTAGE (V) 10 -15V 6 4 1000 Ciss 300 Coss 2 0 0 3 6 9 Q g , GATE CHARGE (nC) 12 100 30 0.1 15 0.3 1 3 7 -V DS , DRAIN TO SOURCE VOLTAGE (V) 15 30 Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 80 5 10 S RD (ON )L IMI 100 us T 1m s 10m s 10 0m s 1s 3 1 0.3 VGS = -10V SINGLE PULSE R θJA = 156°C/W TA = 25°C 0.1 0.03 0.01 0.
PAGE 5
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