Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDC8601, MOSFET

May 2013

FDC8601 Rev. C1

www.fairchildsemi.com

FDC8601 N-Channel Shielded Gate PowerTrench

MOSFET

FDC8601

N-Channel Shielded Gate PowerTrench

MOSFET

100 V, 2.7 A, 109 mΩ

Features

 Shielded Gate MOSFET Technology

 Max r

DS(on)

= 109 mΩ at V

= 10 V, I

= 2.7 A

 Max r

DS(on)

= 176 mΩ at V

= 6 V, I

= 2.1 A

 High performance trench technology for extremely low r

DS(on)

 High power and current handling capability in a widely used

surface mount package

 Fast switching speed

 100% UIL Tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced PowerTrench

process that

incorporates Shielded Gate technology. This process has been

optimized

for r

DS(on)

, switching performance and ruggedness.

Applications

 Load Switch

 Synchronous Rectifier

 Primary Switch

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 100 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Note 1a) 2.7

-Pulsed 12

Single Pulse Avalanche Energy (Note 3) 13 mJ

Power Dissipation (Note 1a) 1.6

Power Dissipation (Note 1b) 0.8

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case 30

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 78

Device Marking Device Package Reel Size Tape Width Quantity

.861 FDC8601 SSOT-6 7 ’’ 8 mm 3000 units

SuperSOT

-6

Pin 1

Summary of content (7 pages)

PAGE 1
FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A, 109 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 176 mΩ at VGS = 6 V, ID = 2.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.
PAGE 3
5 VGS = 6.5 V ID, DRAIN CURRENT (A) VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 12 VGS = 6 V 9 VGS = 5.5 V 6 VGS = 5 V 3 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 5 V 4 VGS = 6 V 3 VGS = 6.5 V 2 1 0 5 0 3 6 9 12 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) 500 ID = 2.
PAGE 4
300 ID = 2.7 A VDD = 25 V Ciss 100 8 VDD = 50 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 75 V 4 Coss 10 Crss 2 0 f = 1 MHz VGS = 0 V 0 1 2 3 1 0.1 4 Figure 7. Gate Charge Characteristics 7 3.0 6 2.5 5 100 TJ = 25 oC 4 TJ = 100 oC 3 TJ = 125 oC VGS = 10 V 2.0 1.5 VGS = 6 V 1.0 2 0.5 1 0.01 0.0 25 o RθJA = 78 C/W 0.1 1 2 50 100 125 150 o Figure 9. Unclamped Inductive Switching Capability Figure 10.
PAGE 5
2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 175 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Juncton-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDC8601 Rev. C1 5 www.fairchildsemi.
PAGE 6
FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDC8601 Rev. C1 6 www.fairchildsemi.
PAGE 7
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.