Datasheet

October 2013
FDD120AN15A0 — N-Channel PowerTrench
®
MOSFET
www.fairchildsemi.com
1
FDD120AN15A0
Features
Formerly developmental type 82845
Applications
N-Channel PowerTrench
®
MOSFET
150 V, 14 A, 120 mΩ
R
DS(on)
= 101 m ( Typ.) @ V
GS
= 10 V, I
D
= 4 A
Q
G(tot)
= 11.2 nC ( Typ.) @ V
GS
= 10 V
Low Miller Charge
Low Q
rr
Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
LED TV
Micro Solar Inverter
Synchronous Rectification
Consumer Appliances
Uninterruptible Power Supply
D-PAK
G
S
D
G
S
D
Thermal Resistance, Junction to Case, Max. 2.31
Symbol Parameter FDD120AN15A0 Unit
MOSFET Maximum Ratings T
C
= 25°C unless otherwise noted
V
DSS
Drain to Source Voltage 150 V
V
GS
Gate to Source Voltage ±20 V
I
D
14 A
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 10V) 9.7 A
Continuous (T
amb
= 25
o
C, V
GS
= 10V) with R
θJA
= 52
o
C/W 2.8 A
Pulsed Figure 4 A
E
AS
Single Pulse Avalanche Energy (Note 1) 122 mJ
P
D
Power dissipation 65 W
Derate above 25
o
C0.43
o
CW/
T
J
, T
STG
Operating and Storage Temperature -55 to 175
o
C
Thermal Resistance, Junction to Ambient, 1in copper pad area, Max. 52
Thermal Resistance, Junction to Ambient, Max. 100
Thermal Characteristics
R
θJC
o
C/W
R
θJA
o
C/W
R
θJA
2 o
C/W
©2002 Fairchild Semiconductor Corporation
FDD120AN15A0 Rev. C2

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