Datasheet

©2002 Fairchild Semiconductor Corporation FDD2572 / FDU2572 Rev. B1
FDD2572 / FDU2572
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Resistive Switching Characteristics
(V
GS
= 10V)
Drain-Source Diode Characteristics
Notes:
1: Starting T
J
= 25°C, L = 0.2mH, I
AS
= 19A.
Device Marking Device Package Reel Size Tape Width Quantity
FDD2572 FDD2572 TO-252AA 330mm 16mm 2500 units
FDU2572 FDU2572 TO-251AA Tube N/A 75 units
Symbol Parameter Test Conditions Min Typ Max Units
B
VDSS
Drain to Source Breakdown Voltage I
D
= 250µA, V
GS
= 0V 150 - - V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 120V - - 1
µA
V
GS
= 0V T
C
= 150
o
--250
I
GSS
Gate to Source Leakage Current V
GS
= ±20V - - ±100 nA
V
GS(TH)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250µA2-4V
r
DS(ON)
Drain to Source On Resistance
I
D
=9A, V
GS
=10V - 0.045 0.054
ΩI
D
= 4A, V
GS
= 6V, - 0.050 0.075
I
D
=9A, V
GS
=10V, T
C
=175
o
C - 0.126 0.146
C
ISS
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-1770- pF
C
OSS
Output Capacitance - 183 - pF
C
RSS
Reverse Transfer Capacitance - 40 - pF
Q
g(TOT)
Total Gate Charge at 10V V
GS
= 0V to 10V
V
DD
= 75V
I
D
= 9A
I
g
= 1.0mA
-2634nC
Q
g(TH)
Threshold Gate Charge V
GS
= 0V to 2V - 3.3 4.3 nC
Q
gs
Gate to Source Gate Charge - 8 - nC
Q
gs2
Gate Charge Threshold to Plateau - 5 - nC
Q
gd
Gate to Drain “Miller” Charge - 6 - nC
t
ON
Turn-On Time
V
DD
= 75V, I
D
= 9A
V
GS
= 10V, R
GS
= 11.0Ω
--36ns
t
d(ON)
Turn-On Delay Time - 11 - ns
t
r
Rise Time - 14 - ns
t
d(OFF)
Turn-Off Delay Time - 31 - ns
t
f
Fall Time - 14 - ns
t
OFF
Turn-Off Time - - 66 ns
V
SD
Source to Drain Diode Voltage
I
SD
= 9A - - 1.25 V
I
SD
= 4A - - 1.0 V
t
rr
Reverse Recovery Time I
SD
= 9A, dI
SD
/dt =100A/µs- -74ns
Q
RR
Reverse Recovered Charge I
SD
= 9A, dI
SD
/dt =100A/µs - - 169 nC