Datasheet

©2002 Fairchild Semiconductor Corporation
September 2002
FDD2582 Rev. B
FDD2582
FDD2582
N-Channel PowerTrench
®
MOSFET
150V, 21A, 66mΩ
Features
•r
DS(ON)
= 58mΩ (Typ.), V
GS
= 10V, I
D
= 7A
•Q
g
(tot) = 19nC (Typ.), V
GS
= 10V
• Low Miller Charge
•Low Q
RR
Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82855
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection System
• 42V Automotive Load Control
• Electronic Valve Train System
MOSFET Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
Symbol Parameter Ratings Units
V
DSS
Drain to Source Voltage 150 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current
21 A
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 10V) 15
Continuous (T
amb
= 25
o
C, V
GS
= 10V, R
θJA
= 52
o
C/W) 3.7 A
Pulsed Figure 4 A
E
AS
Single Pulse Avalanche Energy (Note 1) 59 mJ
P
D
Power dissipation 95 W
Derate above 25
o
C0.63W/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to 175
o
C
R
θJC
Thermal Resistance Junction to Case TO-252 1.58
o
C/W
R
θJA
Thermal Resistance Junction to Ambient TO-252 100
o
C/W
R
θJA
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area 52
o
C/W
GATE
(FLANGE)
DRAIN
SOURCE
TO-252AA
FDD SERIES
D
G
S