Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDD2670, MOSFET

November 2001

2001 Fairchild Semiconductor Corporation

FDD2670 Rev C1(W)

FDD2670

200V N-Channel PowerTrench







MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

RDS

(ON)

specifications.

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power

supply designs with higher overall efficiency.

Features

• 3.6 A, 200 V. R

DS(ON)

= 130 mΩ @ V

= 10 V

• Low gate charge

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

TO-252

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 200 V

GSS

Gate-Source Voltage

±20

Drain Current – Continuous (Note 1) 3.6 A

Drain Current – Pulsed 20

Maximum Power Dissipation @ T

= 25°C (Note 1)

@ T

= 25°C (Note 1a)

3.2

@ T

= 25°C (Note 1b)

1.3

dv/dt Peak Diode Recovery dv/dt (Note 3) 3.2 V/ns

, T

STG

Operating and Storage Junction Temperature Range -55 to +150

°C

Thermal Characteristics

θJC

Thermal Resistance, Junction-to-Case (Note 1) 1.8

°C/W

θJA

Thermal Resistance, Junction-to-Ambient (Note 1b) 96

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDD2670 FDD2670 13’’ 16mm 2500 units

FDD2670

Summary of content (5 pages)

PAGE 1
FDD2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.6 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V • Low gate charge • Fast switching speed These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 1) WDSS IAR Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 100 V, ID = 3.6 A 375 mJ 3.
PAGE 3
FDD2670 Typical Characteristics 1.6 20 VGS = 10V 6.5V VGS = 5.5V 15 1.4 6.0V 6.0V 1.2 10 6.5V 10.0V 1 5 5.5V 0.8 0 0 2 4 6 8 0 10 4 8 Figure 1. On-Region Characteristics. 16 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.4 2.5 ID = 3.6A VGS = 10V ID = 1.8 A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 12 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 0.
PAGE 4
FDD2670 Typical Characteristics VGS, GATE-SOURCE VOLTAGE (V) 15 2000 ID = 3.6 A f = 1MHz VGS = 0 V VDS = 40V 70 V 12 1500 100 V CISS 9 1000 6 500 3 COSS CRSS 0 0 0 5 10 15 20 25 30 35 0 40 20 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 60 80 100 Figure 8. Capacitance Characteristics. 100 100 100µs RDS(ON) LIMIT ID, DRAIN CURRENT (A) 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 SINGLE PULSE RθJA = 96°C/W TA = 25°C 80 10ms 100ms 1s 1 60 10s DC 0.1 0.
PAGE 5
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