Datasheet

©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDD306P Rev. C1
FDD306P P-Channel 1.8V Specified PowerTrench
®
MOSFET
FDD306P
P-Channel 1.8V Specified PowerTrench
®
MOSFET
Features
■ –6.7 A, –12 V. R
DS(ON)
= 28 m Ω @ V
GS
= –4.5 V
R
DS(ON)
= 41 m Ω @ V
GS
= –2.5 V
R
DS(ON)
= 90 m Ω @ V
GS
= –1.8 V
■ Fast switching speed
■ High performance trench technology for extremely
low R
DS(ON)
■ High power and current handling capability
Applications
■ DC/DC converter
General Description
This P-Channel 1.8V Specified MOSFET uses Fairchild’s
advanced low voltage PowerTrench process. It has been opti-
mized for battery power management.
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –12 V
V
GSS
Gate-Source Voltage ± 8V
I
D
Drain Current – Continuous (Note 3) –6.7 A
– Pulsed (Note 1a) –54
P
D
Power Dissipation for Single Operation (Note 1) 52 W
(Note 1a) 3.8
(Note 1b) 1.6
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +175 ° C
Thermal Characteristics
R
θ JC
Thermal Resistance, Junction-to-Case (Note 1) 2.9 ° C/W
R
θ JA
Thermal Resistance, Junction-to-Ambient (Note 1a) 40 ° C/W
R
θ JA
Thermal Resistance, Junction-to-Ambient (Note 1b) 96 ° C/W
Device Marking Device Reel Size Tape width Quantity
FDD306P FDD306P 13’’ 12mm 2500 units
G
S
D
TO-252
S
G
D
February 2014