Datasheet

©2010 Fairchild Semiconductor Corporation
March 2010
FDD3672 Rev. A2
FDD3672
FDD3672
N-Channel UltraFET
®
Trench MOSFET
100V, 44A, 28mΩ
Features
•r
DS(ON)
= 24mΩ (Typ.), V
GS
= 10V, I
D
= 44A
•Q
g
(tot) = 24nC (Typ.), V
GS
= 10V
• Low Miller Charge
• Low Qrr Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82760
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
MOSFET Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
Symbol Parameter Ratings Units
V
DSS
Drain to Source Voltage 100 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current
44 A
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 10V) 31 A
Continuous (T
amb
= 25
o
C, V
GS
= 10V, R
θJA
= 52
o
C/W) 6.5 A
Pulsed Figure 4 A
E
AS
Single Pulse Avalanche Energy (Note 1) 120 mJ
P
D
Power dissipation 135 W
Derate above 25
o
C 0.9 W/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to 175
o
C
R
θJC
Thermal Resistance Junction to Case TO-252 1.11
o
C/W
R
θJA
Thermal Resistance Junction to Ambient TO-252 100
o
C/W
R
θJA
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area 52
o
C/W
S
G
D
TO-252AA
GATE
SOURCE
(FLANGE)
DRAIN