Datasheet

February 2001
2001 Fairchild Semiconductor Corporation FDD3680 Rev B1(W)
FDD3680
100V N-Channel PowerTrench

MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• 25 A, 100 V. R
DS(ON)
= 46 mΩ @ V
GS
= 10 V
R
DS(ON)
= 51 mΩ @ V
GS
= 6 V
• Low gate charge (38 nC typical)
• Fast switching speed
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability.
G
S
D
TO-252
S
D
G
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 100 V
V
GSS
Gate-Source Voltage
±20
V
I
D
Drain Current – Continuous (Note 1) 25 A
Drain Current – Pulsed 100
Maximum Power Dissipation (Note 1) 68
(Note 1a)
3.8
P
D
(Note 1b)
1.6
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +175
°C
Thermal Characteristics
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 2.2
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1b) 96
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD3680 FDD3680 13’’ 16mm 2500 units
FDD3680