Datasheet

April 2001
2001 Fairchild Semiconductor Corp.
FDD3690 Rev C(W)
FDD3690
100V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
22 A, 100 V. R
DS(ON)
= 64 m @ V
GS
= 10 V
R
DS(ON)
= 71 m @ V
GS
= 6 V
Low gate charge (28nC typical)
Fast Switching
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
G
S
D
TO-252
D-PAK
(TO-252)
S
G
D
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 100 V
V
GSS
Gate-Source Voltage
±20
V
I
D
Continuous Drain Current @T
C
=25°C (Note 3) 22 A
Pulsed (Note 1a) 75
Power Dissipation @T
C
=25°C (Note 3) 60
@T
A
=25°C (Note 1a) 3.8
P
D
@T
A
=25°C (Note 1b) 1.6
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +175
°C
Thermal Characteristics
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1) 2.5
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 40
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1b) 96
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD3690 FDD3690 13’’ 16mm 2500 units
FDD3690

Summary of content (5 pages)