Datasheet

April 2002
2002 Fairchild Semiconductor Corp.
FDD3706/FDU3706 Rev C (W)
FDD3706/FDU3706
20V N-Channel PowerTrench

MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low R
DS(ON)
in a small package.
Applications
• DC/DC converter
• Motor Drives
Features
• 50 A, 20 V R
DS(ON)
= 9 mΩ @ V
GS
= 10 V
R
DS(ON)
= 11 mΩ @ V
GS
= 4.5 V
R
DS(ON)
= 16 mΩ @ V
GS
= 2.5 V
• Low gate charge (16 nC)
• Fast Switching
• High performance trench technology for extremely
low R
DS(ON)
G
TO-252
D-PAK
(TO-252)
G D S
I-PAK
(TO-251AA)
S
G
D
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 20 V
V
GSS
Gate-Source Voltage ± 12 V
I
D
Continuous Drain Current @T
C
=25°C (Note 3) 50 A
@T
A
=25°C (Note 1a) 14.7
Pulsed (Note 1a) 60
Power Dissipation @T
C
=25°C (Note 3) 44
@T
A
=25°C (Note 1a) 3.8
P
D
@T
A
=25°C (Note 1b) 1.6
W
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +175 °C
Thermal Characteristics
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 3.4 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 45 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
FDD3706 FDD3706 D-PAK (TO-252) 13’’ 12mm 2500 units
FDU3706 FDU3706 I-PAK (TO-251) Tube N/A 75
FDD3706/FDU3706