Datasheet

tm
October 2008
©2008 Fairchild Semiconductor Corporation
FDD3860 Rev.C1
www.fairchildsemi.com
1
FDD3860 N-Channel PowerTrench
®
MOSFET
FDD3860
N-Channel PowerTrench
®
MOSFET
100V, 29A, 36mΩ
Features
 Max r
DS(on)
= 36mΩ at V
GS
= 10V, I
D
= 5.9A
 High performance trench technology for extremely low r
DS(on)
 100% UIL tested
 RoHS Compliant
General Description
This N-Channel MOSFET is rugged gate version of Fairchild
Semiconductor‘s advanced Power Trench
®
process. This part is
tailored for low r
DS(on)
and low Qg figure of merit, with avalanche
ruggedness for a wide range of switching applications
.
Applications
 DC-AC Conversion
 Synchronous Rectifier
MOSFET Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 100 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Silicon limited) T
C
= 25°C 29
A -Continuous T
A
= 25°C (Note 1a) 6.2
-Pulsed 60
E
AS
Single Pulse Avalanche Energy (Note 3) 121 mJ
P
D
Power Dissipation T
C
= 25°C 69
W
Power Dissipation T
A
= 25°C (Note 1a) 3.1
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 1.8
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 40
Device Marking Device Package Reel Size Tape Width Quantity
FDD3860 FDD3860 D-PAK (TO-252) 13’’ 12mm 2500 units
G
S
D
TO-252
D-PAK
(
TO-252
)
S
G
D