Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDD390N15A, MOSFET

November 2013

FDD390N15A — N-Channel PowerTrench

MOSFET

FDD390N15A Rev. C3

www.fairchildsemi.com

FDD390N15A

N-Channel PowerTrench

MOSFET

150 V, 26 A, 40 mΩ

Features

•R

DS(on)

= 33.5 mΩ (Typ.) @ V

= 10 V, I

= 26 A

• Fast Switching Speed

• Low Gate Charge, Q

= 14.3 nC (Typ.)

• High Performance Trench Technology for Extremely Low

DS(on)

• High Power and Current Handling Capability

• RoHS Compliant

Description

This N-Channel MOSFET is produced using Fairchild Semicon-

ductor’s advanced PowerTrench

process that has been tai-

lored to minimize the on-state resistance while maintaining

superior switching performance.

Applications

• Consumer Appliances

•LED TV

• Synchronous Rectification

• Uninterruptible Power Supply

• Micro Solar Inverter

D-PAK

Absolute Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FDD390N15A Unit

DSS

Drain to Source Voltage 150 V

GSS

Gate to Source Voltage ±20 V

Drain Current

- Continuous (T

= 25

C,Silicon Limited) 26

- Continuous (T

= 100

C,Silicon Limited) 17

Drain Current - Pulsed (Note 1) 104 A

Single Pulsed Avalanche Energy (Note 2) 78 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns

Power Dissipation

= 25

C) 63 W

- Derate Above 25

C0.5W/

, T

STG

Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds

300

Symbol Parameter

FDD390N15A

Unit

θJC

Thermal Resistance, Junction to Case, Max. 2.0

C/W

θJA

Thermal Resistance, Junction to Ambient, Max. 87

Summary of content (9 pages)

PAGE 1
FDD390N15A N-Channel PowerTrench® MOSFET 150 V, 26 A, 40 mΩ Features Description • RDS(on) = 33.5 mΩ (Typ.) @ VGS = 10 V, ID = 26 A • Low Gate Charge, QG = 14.3 nC (Typ.) This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
PAGE 2
Part Number FDD390N15A Top Mark FDD390N15A Package DPAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 150 - - V - 0.
PAGE 3
Figure 1. On-Region Characteristics ID, Drain Current[A] 100 Figure 2. Transfer Characteristics 200 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V *Notes: 1. VDS = 10V 2. 250μs Pulse Test 100 ID, Drain Current[A] 200 10 10 o 150 C o 25 C o -55 C *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 1 0.1 1 VDS, Drain-Source Voltage[V] 1 5 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2 3 4 5 6 7 VGS, Gate-Source Voltage[V] 8 Figure 4.
PAGE 4
Figure 8. On-Resistance Variation vs. Temperature 1.10 2.6 1.08 2.4 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature 1.04 1.00 0.96 *Notes: 1. VGS = 0V 2. ID = 250μA 0.92 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] 2.0 1.6 1.2 0.4 -80 160 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 26A 0.8 -40 0 40 80 120 o TJ, Junction Temperature [ C] Figure 10.
PAGE 5
FDD390N15A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve ZθJC (t), Thermal Response [o]C/W] Thermal Response [ZθJC 3 1 0.5 0.2 PDM 0.1 t1 0.05 0.1 0.02 0.01 Single pulse 0.01 -5 10 ©2011 Fairchild Semiconductor Corporation FDD390N15A Rev. C3 t2 *Notes: o 1. ZθJC(t) = 2.0 C/W Max. 2. Duty Factor, D= t1/t2 3.
PAGE 6
FDD390N15A — N-Channel PowerTrench® MOSFET IG = const. Figure 14. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 15. Resistive Switching Test Circuit & Waveforms VGS Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDD390N15A Rev. C3 6 www.fairchildsemi.
PAGE 7
FDD390N15A — N-Channel PowerTrench® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 17.
PAGE 8
FDD390N15A — N-Channel PowerTrench® MOSFET Mechanical Dimensions Figure 18. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
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