Datasheet

©2011 Fairchild Semiconductor Corporation
FDD390N15A Rev. C3
www.fairchildsemi.com
4
FDD390N15A — N-Channel PowerTrench
®
MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
F ig u re 11 . E o s s v s . Dr a in to So u rc e V o lt a g e F i g u r e 1 2 . Un c l am p ed I n du c ti v e
Switching Capability
-80 -40 0 40 80 120 160
0.4
0.8
1.2
1.6
2.0
2.4
2.6
*Notes:
1. V
GS
= 10V
2. I
D
= 26A
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
-80 -40 0 40 80 120 160
0.92
0.96
1.00
1.04
1.08
1.10
*Notes:
1. V
GS
= 0V
2. I
D
= 250μA
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
1 10 100 200
0.01
0.1
1
10
100
300
3ms
10μs
100μs
1ms
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
DC
25 50 75 100 125 150
0
5
10
15
20
25
30
R
θJC
= 2.0
o
C/W
V
GS
= 10V
I
D
, Drain Current [A]
T
C
, Case Temperature [
o
C]
0 306090120150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
E
OSS
, [μJ]
V
DS
, Drain to Source Voltage [V]
0.01 0.1 1 10 20
1
10
If R = 0
t
AV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
t
AV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
I
AS
, AVALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
12