Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDD390N15ALZ, MOSFET

January 2014

FDD390N15ALZ — N-Channel PowerTrench

MOSFET

FDD390N15ALZ Rev. C4

www.fairchildsemi.com

FDD390N15ALZ

N-Channel PowerTrench

MOSFET

150 V, 26 A, 42 m

Features

•R

DS(on)

= 33.4 m (Typ.) @ V

= 10 V, I

= 26 A

•R

DS(on)

= 42.2 m (Typ.) @ V

= 4.5 V, I

= 20 A

• Fast Switching Speed

• Low Gate Charge, Q

= 17.6 nC (Typ.)

• High Performance Trench Technology for Extremely Low

DS(on)

• High Power and Current Handling Capability

•RoHS Compliant

Description

This N-Channel MOSFET is produced using Fairchild Semicon-

ductor’s advanced PowerTrench

process that has been tai-

lored to minimize the on-state resistance while maintaining

superior switching performance.

Applications

• Consumer Applicances

•LED TV

• Synchronous Rectification

• Uninterruptible Power Supplies

• Micro Solar Inverter

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FDD390N15ALZ Unit

DSS

Drain to Source Voltage 150 V

GSS

Gate to Source Voltage ±20 V

Drain Current

- Continuous (T

= 25

C) 26

- Continuous (T

= 100

C) 17

Drain Current - Pulsed (Note 1) 104 A

Single Pulsed Avalanche Energy (Note 2) 96 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 13 V/ns

Power Dissipation

= 25

C) 63 W

- Derate Above 25

C0.5W/

, T

STG

Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds

300

Symbol Parameter

FDD390N15ALZ

Unit

JC

Thermal Resistance, Junction to Case, Max. 2.0

C/W

JA

Thermal Resistance, Junction to Ambient, Max. 87

D-PAK

Summary of content (9 pages)

PAGE 1
FDD390N15ALZ N-Channel PowerTrench® MOSFET 150 V, 26 A, 42 m Features Description • RDS(on) = 33.4 m (Typ.) @ VGS = 10 V, ID = 26 A • Fast Switching Speed This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • Low Gate Charge, QG = 17.6 nC (Typ.
PAGE 2
Part Number FDD390N15ALZ Top Mark FDD390N15ALZ Package DPAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 150 - - V - 0.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1000 100 *Notes: 1. VDS = 10V 2. 250s Pulse Test ID, Drain Current[A] ID, Drain Current[A] VGS = 10.0V 5.5V 5.0V 4.5V 100 4.0V 3.5V 3.0V 10 1 o 150 C 10 o 25 C o -55 C *Notes: 1. 250s Pulse Test 0.1 0.05 0.1 o 2. TC = 25 C 1 VDS, Drain-Source Voltage[V] 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1 2 3 4 5 VGS, Gate-Source Voltage[V] 6 Figure 4.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.6 2.4 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250A 0.90 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] 2.0 1.6 1.2 0.8 0.4 -80 160 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 26A -40 0 40 80 120 o TJ, Junction Temperature [ C] 160 Figure 10.
PAGE 5
FDD390N15ALZ — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) ZJC(t), Thermal Response [oC/W] Thermal Response [ZJC] Figure 13. Transient Thermal Response Curve 3 1 0.5 0.2 0.1 0.1 t1 0.02 0.01 Single pulse 0.01 -5 10 ©2012 Fairchild Semiconductor Corporation FDD390N15ALZ Rev. C4 PDM 0.05 *Notes: t2 o 1. ZJC(t) = 2.0 C/W Max. 2. Duty Factor, D= t1/t2 3.
PAGE 6
FDD390N15ALZ — N-Channel PowerTrench® MOSFET IG = const. Figure 14. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 15. Resistive Switching Test Circuit & Waveforms VGS Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms ©2012 Fairchild Semiconductor Corporation FDD390N15ALZ Rev. C4 6 www.fairchildsemi.
PAGE 7
FDD390N15ALZ — N-Channel PowerTrench® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 17.
PAGE 8
FDD390N15ALZ — N-Channel PowerTrench® MOSFET Mechanical Dimensions Figure 18. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.