Datasheet

tm
July 2007
©2007 Fairchild Semiconductor Corporation
FDD4141 Rev.C
www.fairchildsemi.com
1
FDD4141 P-Channel PowerTrench
®
MOSFET
FDD4141
P-Channel PowerTrench
®
MOSFET
-40V, -50A, 12.3mΩ
Features
 Max r
DS(on)
= 12.3mΩ at V
GS
= -10V, I
D
= -12.7A
 Max r
DS(on)
= 18.0mΩ at V
GS
= -4.5V, I
D
= -10.4A
 High performance trench technology for extremely low r
DS(on)
 RoHS Compliant
General Description
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench
®
technology to
deliver low
r
DS(on)
and optimized Bvdss capability to offer
superior performance benefit in the applications.
and optimized
switching performance capability reducing power dissipation
losses in converter/inverter applications.
Applications
 Inverter
 Power Supplies
MOSFET Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage -40 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25°C -50
A
-Continuous (Silicon limited) T
C
= 25°C -58
-Continuous T
A
= 25°C (Note 1a) -10.8
-Pulsed -100
E
AS
Single Pulse Avalanche Energy (Note 3) 337 mJ
P
D
Power Dissipation T
C
= 25°C 69
W
Power Dissipation T
A
= 25°C (Note 1a) 2.4
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 1.8
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 52
Device Marking Device Package Reel Size Tape Width Quantity
FDD4141 FDD4141 D-PAK (TO-252) 13’’ 12mm 2500 units
G
S
D
TO-252
D-PAK
(
TO-252
)
S
G
D