Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDD4243, MOSFET

November 2007

FDD4243 40V P-Channel PowerTrench

MOSFET

FDD4243 Rev.C1

www.fairchildsemi.com

FDD4243

40V P-Channel PowerTrench

MOSFET

-40V, -14A, 44mΩ

Features

 Max r

DS(on)

= 44mΩ at V

= -10V, I

= -6.7A

 Max r

DS(on)

= 64mΩ at V

= -4.5V, I

= -5.5A

 High performance trench technology for extremely low r

DS(on)

 RoHS Compliant

General Description

This P-Channel MOSFET has been produced using Fairchild

Semiconductor’s proprietary PowerTrench

technology to

deliver low

DS(on)

and optimized Bvdss capability to offer

superior performance benefit in the applications.

Application

 Inverter

 Power Supplies

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage -40 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) T

= 25°C -14

-Continuous (Silicon limited) T

= 25°C (Note 1) -24

-Continuous T

= 25°C (Note 1a) -6.7

-Pulsed -60

Single Pulse Avalanche Energy (Note 3) 84 mJ

Power Dissipation T

= 25°C 42

Power Dissipation (Note 1a) 3

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case 3.0

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 40

Device Marking Device Package Reel Size Tape Width Quantity

FDD4243 FDD4243 D-PAK(TO-252) 13’’ 12mm 2500 units

TO-252

D-PAK

(

TO-252

)

Summary of content (6 pages)

PAGE 1
FDD4243 40V P-Channel PowerTrench® MOSFET -40V, -14A, 44mΩ Features General Description Max rDS(on) = 44mΩ at VGS = -10V, ID = -6.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. Max rDS(on) = 64mΩ at VGS = -4.5V, ID = -5.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V -40 -32 VDS = -32V, VGS = 0V mV/°C -1 TJ = 125°C -100 VGS = ±20V, VGS = 0V µA ±100 nA -3.
PAGE 3
50 40 3.5 VGS = -10V VGS = -4.5V VGS = - 6V VGS = -5V VGS = -4V 30 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 20 VGS = - 3.0V 10 0 0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 60 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 5 ID = -6.7A VGS = -10V 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 Figure 3.
PAGE 4
-VGS, GATE TO SOURCE VOLTAGE(V) 10 3000 ID = -6.7A 6 CAPACITANCE (pF) VDD = -10V 8 VDD = -20V VDD = -30V 4 2 0 1000 Coss 100 0 4 8 12 16 20 50 0.1 24 Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics Crss 30 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 25 8 -ID, DRAIN CURRENT (A) -IAS, AVALANCHE CURRENT(A) f = 1MHz VGS = 0V Figure 8. Capacitance vs Drain to Source Voltage 10 6 TJ = 25oC 4 2 TJ = 125oC 20 VGS = -10V 15 10 Limited by Package VGS = -4.5V 5 o RθJC = 3.
PAGE 5
2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJC 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 0.01 SINGLE PULSE 0.003 -5 10 -4 10 -3 -2 10 10 -1 10 0 10 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDD4243 Rev.C1 5 www.fairchildsemi.
PAGE 6
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.