Datasheet

tm
October 2006
FDD4685 40V P-Channel PowerTrench
®
MOSFET
©2006 Fairchild Semiconductor Corporation
FDD4685 Rev.B
www.fairchildsemi.com
1
FDD4685
40V P-Channel PowerTrench
®
MOSFET
–40V, –32A, 27mΩ
Features
 Max r
DS(on)
= 27mΩ at V
GS
= –10V, I
D
= –8.4A
 Max r
DS(on)
= 35mΩ at V
GS
= –4.5V, I
D
= –7A
 High performance trench technology for extremely low r
DS(on)
 RoHS Compliant
General Description
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench
®
technology to
deliver low
r
DS(on)
and good switching characteristic offering
superior performance in application.
Application
 Inverter
 Power Supplies
MOSFET Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage –40 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous(Package Limited) T
C
= 25°C –32
A
-Continuous(Silicon Limited) T
C
= 25°C (Note 1) –40
-Continuous T
A
= 25°C (Note 1a) –8.4
-Pulsed –100
E
AS
Drain-Source Avalanche Energy (Note 3) 121 mJ
P
D
Power Dissipation T
C
= 25°C 69
W
Power Dissipation (Note 1a) 3
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 1.8
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 40
Device Marking Device Package Reel Size Tape Width Quantity
FDD4685 FDD4685 D-PAK(TO-252) 13’’ 12mm 2500 units
G
S
D
TO-252
D-PAK
(
TO-252
)
S
G
D