Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDD5353, MOSFET

March 2013

FDD5353 Rev.C1

www.fairchildsemi.com

FDD5353 N-Channel Power Trench

MOSFET

FDD5353

N-Channel Power Trench

MOSFET

60V, 50A, 12.3mΩ

Features

 Max r

DS(on)

= 12.3mΩ at V

= 10V, I

= 10.7A

 Max r

DS(on)

= 15.4mΩ at V

= 4.5V, I

= 9.5A

 100% UIL Tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench

process that has

been especially tailored to minimize the on-state resistance and

yet maintain superior switching performance.

Application

 Inverter

 Synchronous rectifier

 Primary switch

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 60 V

Gate to Source Voltage ±20 V

Drain Current -Continuous T

= 25°C 50

A -Continuous T

= 25°C (Note 1a) 11.5

-Pulsed 100

Single Pulse Avalanche Energy (Note 3) 253 mJ

Power Dissipation T

= 25°C 69

Power Dissipation T

= 25°C (Note 1a) 3.1

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case 1.8

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 40

Device Marking Device Package Reel Size Tape Width Quantity

FDD5353 FDD5353 D-PAK (TO-252) 13’’ 12mm 2500 units

TO-252

D-PAK

(TO-252)

Summary of content (6 pages)

PAGE 1
FDD5353 N-Channel Power Trench® MOSFET 60V, 50A, 12.3mΩ Features General Description Max rDS(on) = 12.3mΩ at VGS = 10V, ID = 10.7A 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. RoHS Compliant Application Max rDS(on) = 15.4mΩ at VGS = 4.5V, ID = 9.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 60 V ID = 250μA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = 48V, 1 μA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 3.
PAGE 3
100 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3.0 VGS = 10V ID, DRAIN CURRENT (A) 80 VGS = 4.5V VGS = 4V 60 VGS = 3.5V 40 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 20 VGS = 3V 0 0 1 2 3 4 VGS = 3V 2.5 VGS = 4V 2.0 VGS = 4.5V 1.5 1.0 0.5 5 0 20 40 60 80 100 ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 40 ID = 10.7A VGS = 10V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 0.
PAGE 4
10000 ID = 10.7A Ciss VDD = 20V 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 6 VDD = 30V 4 VDD = 40V 1000 Coss 100 Crss f = 1MHz VGS = 0V 2 0 0 10 20 30 40 10 0.1 50 1 Figure 7. Gate Charge Characteristics 60 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 30 Figure 8. Capacitance vs Drain to Source Voltage 100 TJ = 25oC 10 TJ = 125oC 50 VGS = 10V 40 Limited by Package 30 VGS = 4.5V 20 o RθJC = 1.8 C/W 10 1 0.01 0.
PAGE 5
NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJc x RθJc + TC SINGLE PULSE o RθJC = 1.8 C/W 0.001 5E-4 -6 10 -5 -4 10 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE 0.
PAGE 6
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.