Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDD5612, MOSFET

March 2001

2001 Fairchild Semiconductor Corporation

FDD5612 REV. C1(W)

FDD5612

60V N-Channel PowerTrench







MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

DS(ON)

specifications. The result is a MOSFET that is

easy and safer to drive (even at very high frequencies),

and DC/DC power supply designs with higher overall

efficiency.

Features

• 18 A, 60 V. R

DS(ON)

= 55 mΩ @ V

= 10 V

DS(ON)

= 64 mΩ @ V

= 6 V

• Optimized for use in high frequency DC/DC

converters.

• Low gade charge.

• Very fast switching.

TO-252

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 60 V

GSS

Gate-Source Voltage

±20

Drain Current – Continuous (Note 1) 18 A

(Note 1a)

5.4

Drain Current – Pulsed 100

Maximum Power Dissipation (Note 1) 42

(Note 1a)

3.8

(Note 1b)

1.6

, T

STG

Operating and Storage Junction Temperature Range –55 to +175

°C

Thermal Characteristics

θJC

Thermal Resistance, Junction-to-Case

(Note 1) 3.5

°C/W

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 40

°C/W

(Note 1b)

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDD5612 FDD5612 13’’ 16mm 2500 units

FDD5612

Summary of content (5 pages)

PAGE 1
FDD5612 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 18 A, 60 V. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 1) W DSS IAR Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 30 V, ID = 5.4 A 90 mJ 5.
PAGE 3
FDD5612 Typical Characteristics 30 6.0V 2.2 5.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V ID, DRAIN CURRENT (A) 25 4.5V 20 15 4.0V 10 5 2 VGS = 4.0V 1.8 1.6 4.5V 1.4 5.0V 6.0V 1.2 10V 1 0.8 0 0 1 2 3 4 0 5 6 Figure 1. On-Region Characteristics. 18 24 30 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.12 2.6 ID = 2.7A ID = 5.4A VGS = 10V 2.
PAGE 4
FDD5612 Typical Characteristics 1000 ID = 5.4A VDS = 20V f = 1MHz VGS = 0 V 30V 8 800 40V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 CISS 600 400 200 2 COSS CRSS 0 0 0 2 4 6 8 10 12 0 14 10 Figure 7. Gate Charge Characteristics. 40 50 60 80 P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 30 Figure 8. Capacitance Characteristics. 1000 100µs 100 RDS(ON) LIMIT 1m 10ms 100ms 10 1s 1 10s VGS = 4.5V SINGLE PULSE RθJA = 96oC/W 0.1 DC TA = 25oC 0.01 0.
PAGE 5
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