Datasheet

May 2005
©2005 Fairchild Semiconductor Corporation
FDD5614P Rev C1(W)
FDD5614P
60V P-Channel PowerTrench
®
MOSFET
General Description
This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized
for power management applications.
Applications
• DC/DC converter
• Power management
• Load switch
Features
• –15 A, –60 V. R
DS(ON)
= 100 mΩ @ V
GS
= –10 V
R
DS(ON)
= 130 mΩ @ V
GS
= –4.5 V
• Fast switching speed
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability
G
S
D
TO-252
S
G
D
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –60 V
V
GSS
Gate-Source Voltage
±20
V
I
D
Drain Current – Continuous (Note 3)
–15
A
– Pulsed (Note 1a)
–45
Power Dissipation for Single Operation (Note 1) 42
(Note 1a)
3.8
P
D
(Note 1b)
1.6
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +175
°C
Thermal Characteristics
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1) 3.5
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 40
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1b) 96
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD5614P FDD5614P 13’’ 12mm 2500 units
FDD5614P