Datasheet

FDD5614P Rev C1(W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
V
DD
= –30 V, I
D
= –4.5 A 90 mJ
I
AR
Maximum Drain-Source Avalanche
Current
–4.5 A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= –250 µA
–60 V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= –250 µA, Referenced to 25°C
–49
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= –48 V, V
GS
= 0 V –1
µA
I
GSSF
Gate–Body Leakage, Forward V
GS
= 20V, V
DS
= 0 V 100 nA
I
GSSR
Gate–Body Leakage, Reverse V
GS
= –20 V, V
DS
= 0 V –100 nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= –250 µA
–1 –1.6 –3 V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= –250 µA, Referenced to 25°C
4
mV/°C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= –10 V, I
D
= –4.5 A
V
GS
= –4.5 V, I
D
= –3.9 A
V
GS
= –10 V,I
D
= –4.5 A,T
J
=125°C
76
99
137
100
130
185
mΩ
I
D(on)
On–State Drain Current V
GS
= –10 V, V
DS
= –5 V –20 A
g
FS
Forward Transconductance V
DS
= –5 V, I
D
= –3 A 8 S
Dynamic Characteristics
C
iss
Input Capacitance 759 pF
C
oss
Output Capacitance 90 pF
C
rss
Reverse Transfer Capacitance
V
DS
= –30 V, V
GS
= 0 V,
f = 1.0 MHz
39 pF
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time 7 14 ns
t
r
Turn–On Rise Time 10 20 ns
t
d(off)
Turn–Off Delay Time 19 34 ns
t
f
Turn–Off Fall Time
V
DD
= –30 V, I
D
= –1 A,
V
GS
= –10 V, R
GEN
= 6 Ω
12 22 ns
Q
g
Total Gate Charge 15 24 nC
Q
gs
Gate–Source Charge 2.5 nC
Q
gd
Gate–Drain Charge
V
DS
= –30V, I
D
= –4.5 A,
V
GS
= –10 V
3.0 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current –3.2 A
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= –3.2 A (Note 2) –0.8 –1.2 V
FDD5614P