Datasheet

FDD5614P Rev C1(W)
Typical Characteristics
0
2
4
6
8
10
0481216
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -4.5A
V
DS
= -40V
-20V
-30V
0
200
400
600
800
1000
0 102030405060
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
10s
1s
100ms
100
µ
s
R
DS(ON)
LIMIT
V
GS
= -10V
SINGLE PULSE
R
θJA
= 96
o
C/W
T
A
= 25
o
C
10ms
1ms
0
10
20
30
40
0.1 1 10 100 1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
θJA
= 96°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANC
E
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 96°C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk
)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.0
5
0.1
0.2
D = 0.
5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD5614P