Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDD5670, MOSFET

November 2011

FDD5670 Rev B2

FDD5670

60V N-Channel PowerTrench

®®

MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R

DS( ON) and fast switching speed.

extremely low R

DS(ON)

in a small package.

Applications

• DC/DC converter

• Motor drives

Features

• 52 A, 60 V R

DS(ON)

= 15 mΩ @ V

= 10 V

DS(ON)

= 18 mΩ @ V

= 6 V

• Low gate charge

• Fast switching

• High performance trench technology for extremely

low R

DS(ON)

TO-252

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 60 V

GSS

Gate-Source Voltage

±20

Drain Current – Continuous (Note 3) 52 A

– Pulsed (Note 1a) 150

Power Dissipation for Single Operation (Note 1) 83

(Note 1a)

3.8

(Note 1b)

1.6

, T

STG

Operating and Storage Junction Temperature Range -55 to +175

°C

Thermal Characteristics

θJC

Thermal Resistance, Junction-to-Case (Note 1) 1.8

°C/W

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 40

°C/W

θJA

Thermal Resistance, Junction-to-Ambient (Note 1b) 96

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDD5670 FDD5670 13’’ 16mm 2500 units

FDD5670

Summary of content (5 pages)

PAGE 1
FDD5670 60V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. extremely low RDS(ON) in a small package.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Single Pulse, VDD = 20 V, ID = 10A 360 mJ 10 A Off Characteristics VGS = 0 V, ID = 250 μA 60 V BVDSS ΔBVDSS ===ΔTJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 IGSSF Gate–Body Leakage, Forward VGS = 20 V
PAGE 3
FDD5670 Typical Characteristics 2 VGS = 10V 5.0V 6.0V 50 ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 60 4.5V 40 4.0V 30 20 10 3.5V 1.8 VGS = 4.0V 1.6 1.4 4.5V 5.0V 1.2 6.0V 10V 0.8 0 0 1 2 3 0 4 10 20 Figure 1. On-Region Characteristics. 40 50 60 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.05 1.8 ID =10A VGS = 10V 1.
PAGE 4
FDD5670 Typical Characteristics 10 5000 f = 1MHz VGS = 0 V 20V 8 4000 30V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) VDS = 10V ID = 11A 6 4 2 CISS 3000 2000 COSS 1000 CRSS 0 0 0 10 20 30 40 50 60 0 10 Qg , GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 40 50 P(pk), PEAK TRANSIENT POWER (W) 800 100μs ID, DRAIN CURRENT (A) 30 RDS(ON) LIMIT 100 1ms 10ms 10 100ms 1s 10s 1 DC VGS = 10V SINGLE PULSE RθJA = 96oC/W 0.
PAGE 5
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