Datasheet

FDD5680
FDD5680, Rev. C
FDD5680
N-Channel, PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
Applications
• DC/DC converter
• Motor drives
July 2000
Features
• 38 A, 60 V. R
DS(on)
= 0.021 Ω @ V
GS
= 10 V
R
DS(on)
= 0.025 Ω @ V
GS
= 6 V.
• Low gate charge (33nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R
DS(on)
.
2000 Fairchild Semiconductor International
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 60 V
V
GSS
Gate-Source Voltage
±
20 V
I
D
Maximun Drain Current - Continuous
(
Note 1
)
38
(Note 1a)
8.5
Maximum Drain Current - Pulsed 100
A
Maximum Power Dissipation @ T
C
= 25
o
C
(Note 1)
60
T
A
= 25
o
C
(Note 1a)
2.8
P
D
T
A
= 25
o
C
(Note 1b)
1.3
W
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to- Case
(Note 1)
2.1
°
C/W
R
θ
JA
Thermal Resistance, Junction-to- Ambient
(Note 1b)
96
°
C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD5680 FDD5680 13’’ 16mm 2500
G
S
D
TO-252
S
D
G