Datasheet

FDD5690
FDD5690, Rev. C
FDD5690
60V N-Channel PowerTrench
®
MOSFET
December 2002
2002 Fairchild Semiconductor Corporation
G
S
D
TO-252
S
D
G
Features
 30 A, 60 V. R
DS(ON)
= 0.027Ω @ V
GS
= 10 V
R
DS(ON)
= 0.032 Ω @ V
GS
= 6 V.
 Low gate charge (23nC typical).
 Fast switching speed.
 High performance trench technology for extremely
low R
DS(ON)
.
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
Absolute Maximum Ratings
T
C
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 60 V
V
GSS
Gate-Source Voltage
±20
V
I
D
Maximum Drain Current -Continuous
(Note 1)
30
(Note 1a)
9
Maximum Drain Current -Pulsed 100
A
Maximum Power Dissipation @ T
C
= 25
o
C
(Note 1)
50
T
A
= 25
o
C
(Note 1a)
3.2
P
D
T
A
= 25
o
C
(Note 1b)
1.3
W
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to- Case
(Note 1)
2.5
°
C/W
R
θ
JA
Thermal Resistance, Junction-to- Ambient
(Note 1a)
40
°C/W
(Note 1b)
96
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD5690 FDD5690 13’’ 16mm 2500