Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDD5N50NZFTM, MOSFET

November 2013

FDD5N50NZF — N-Channel UniFET

FRFET

MOSFET

FDD5N50NZF Rev. C1

www.fairchildsemi.com

D-PAK

FDD5N50NZF

N-Channel UniFET

FRFET

MOSFET

500 V, 3.7 A, 1.75 Ω

Features

•R

DS(on)

= 1.47 Ω (Typ.) @ V

= 10 V, I

= 1.85 A

• Low Gate Charge (Typ. 9 nC)

• Low C

rss

(Typ. 4 pF)

• 100% Avalanche Tested

• Improved dv/dt Capability

• ESD Imoroved Capability

• RoHS Compliant

Applications

• LCD/LED/PDP TV

• Lighting

• Uninterruptible Power Supply

Description

UniFET

II MOSFET is Fairchild Semiconductor’s high voltage

MOSFET family based on advanced planar stripe and DMOS

technology. This advanced MOSFET family has the smallest

on-state resistance among the planar MOSFET, and also pro-

vides superior switching performance and higher avalanche

energy strength. In addition, internal gate-source ESD diode

allows UniFET II MOSFET to withstand over 2kV HBM surge

stress. The body diode’s reverse recovery performance of

UniFET II FRFET

MOSFET has been enhanced by lifetime

control. Its t

is less than 100nsec and the reverse dv/dt immu-

nity is 15V/ns while normal planar MOSFETs have over

200nsec and 4.5V/nsec respectively. Therefore, it can remove

additional component and improve system reliability in certain

applications in which the performance of MOSFET’s body diode

is significant. This device family is suitable for switching power

converter applications such as power factor correction (PFC),

flat panel display (FPD) TV power, ATX and electronic lamp bal-

lasts.

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FDD5N50NZFTM Unit

DSS

Drain to Source Voltage 500 V

GSS

Gate to Source Voltage ±25 V

Drain Current

- Continuous (T

= 25

C) 3.7

- Continuous (T

= 100

C) 2.2

Drain Current - Pulsed (Note 1) 14 A

Single Pulsed Avalanche Energy (Note 2) 165 mJ

Avalanche Current (Note 1) 3.3 A

Repetitive Avalanche Energy (Note 1) 6.25 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns

Power Dissipation

= 25

C) 62.5 W

- Derate Above 25

C0.5W/

, T

STG

Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds

300

Symbol Parameter

FDD5N50NZFTM

Unit

θJC

Thermal Resistance, Junction to Case, Max. 2

C/W

θJA

Thermal Resistance, Junction to Ambient, Max. 62.5

Summary of content (8 pages)

PAGE 1
FDD5N50NZF N-Channel UniFETTM FRFET® MOSFET 500 V, 3.7 A, 1.75 Ω Features Description • RDS(on) = 1.47 Ω (Typ.) @ VGS = 10 V, ID = 1.85 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength.
PAGE 2
Part Number FDD5N50NZFTM Top Mark FDD5N50NZF Package DPAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 500 - - V - 0.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V 1 ID, Drain Current[A] ID, Drain Current[A] 10 0.1 o 150 C 1 o 25 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 0.03 0.1 2. TC = 25 C 0.1 25 1 10 VDS, Drain-Source Voltage[V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 5 6 7 VGS, Gate-Source Voltage[V] 8 50 3.
PAGE 4
FDD5N50NZF — N-Channel UniFETTM FRFET® MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.15 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250μA 0.90 -75 -50 0 50 100 o TJ, Junction Temperature [ C] 150 Figure 8. Maximum Safe Operating Area Figure 9. Maximum Drain Current vs.
PAGE 5
FDD5N50NZF — N-Channel UniFETTM FRFET® MOSFET IG = const. Figure 11. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 12. Resistive Switching Test Circuit & Waveforms VGS Figure 13. Unclamped Inductive Switching Test Circuit & Waveforms ©2009 Fairchild Semiconductor Corporation FDD5N50NZF Rev. C1 5 www.fairchildsemi.
PAGE 6
FDD5N50NZF — N-Channel UniFETTM FRFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 14.
PAGE 7
FDD5N50NZF — N-Channel UniFETTM FRFET® MOSFET Mechanical Dimensions Figure 15. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.