Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDD6530A, MOSFET

July 2001

2001 Fairchild Semiconductor Corporation

FDD6630A Rev C (W)

FDD6530A

20V N-Channel PowerTrench



MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low RDS( ON) and fast switching speed.

Applications

• DC/DC converter

• Motor drives

Features

• 21 A, 20 V R

DS(ON)

= 32 mΩ @ V

= 4.5 V

DS(ON)

= 47 mΩ @ V

= 2.5 V

• Low gate charge (6.5 nC typical)

• Fast switching

• High performance trench technology for extremely

low R

DS(ON)

TO-252

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 20 V

GSS

Gate-Source Voltage ±8 V

Drain Current – Continuous (Note 3) 21 A

– Pulsed (Note 1a) 100

Power Dissipation (Note 1) 33

(Note 1a)

3.3

(Note 1b)

1.6

, T

STG

Operating and Storage Junction Temperature Range –55 to +175

°C

Thermal Characteristics

θJC

Thermal Resistance, Junction-to-Case (Note 1) 4.5

°C/W

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 45

°C/W

θJA

Thermal Resistance, Junction-to-Ambient (Note 1b) 96

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDD6530A FDD6530A 13’’ 16mm 2500 units

FDD6530A

Summary of content (5 pages)

PAGE 1
FDD6530A 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. • 21 A, 20 V RDS(ON) = 32 mΩ @ VGS = 4.5 V RDS(ON) = 47 mΩ @ VGS = 2.5 V • Low gate charge (6.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) W DSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Single Pulse, VDD = 10 V 55 mJ 8 A Off Characteristics BVDSS ID = 250 µA Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ∆BVDSS ∆TJ IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V
PAGE 3
FDD6530A Typical Characteristics 30 1.8 VGS = 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.0V 3.5V ID , DRAIN CURRENT (A) 24 2.5V 18 12 2.0V 6 1.6 VGS = 2.5V 1.4 3.0V 1.2 3.5V 4.0V 4.5V 1 0.8 0 0 1 2 3 4 0 5 6 12 Figure 1. On-Region Characteristics. 30 0.12 ID = 4 A ID = 8 A VGS = 4.5V 1.6 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 24 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 1.4 1.2 1 0.8 0.
PAGE 4
FDD6530A Typical Characteristics 1200 ID = 8 A VDS = 5V 10V f = 1MHz VGS = 0 V 1000 4 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 1 CISS 800 600 400 COSS 200 CRSS 0 0 0 2 4 6 0 8 4 Figure 7. Gate Charge Characteristics. 16 20 100 P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 12 Figure 8. Capacitance Characteristics. 1000 100µ µs 100 RDS(ON) LIMIT 1ms 10ms 100ms 10 1s 10s 1 DC VGS = 10V SINGLE PULSE o RθJA = 96 C/W TA = 25oC 0.1 0.01 0.
PAGE 5
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