Datasheet

February 2004
2004 Fairchild Semiconductor Corporation
FDD6612A/FDU6612A Rev E(W)
FDD6612A/FDU6612A
30V N-Channel PowerTrench

MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low R
DS(ON)
in a small package.
Applications
• DC/DC converter
• Motor Drives
Features
• 30 A, 30 V R
DS(ON)
= 20 mΩ @ V
GS
= 10 V
R
DS(ON)
= 28 mΩ @ V
GS
= 4.5 V
• Low gate charge
• Fast Switching
• High performance trench technology for extremely
low R
DS(ON)
G
S
D
TO-252
D-PAK
(TO-252)
G D S
I-PAK
(TO-251AA)
S
G
D
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage
±20
V
I
D
Continuous Drain Current @T
C
=25°C (Note 3) 30 A
@T
A
=25°C (Note 1a) 9.5
Pulsed (Note 1a) 60
Power Dissipation @T
C
=25°C (Note 1) 36
@T
A
=25°C (Note 1a) 2.8
P
D
@T
A
=25°C (Note 1b) 1.3
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +175
°C
Thermal Characteristics
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 3.9
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 45
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1b) 96
°C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
FDD6612A FDD6612A D-PAK (TO-252) 13’’ 12mm 2500 units
FDU6612A FDU6612A I-PAK (TO-251) Tube N/A 75
FDD6612A/FDU6612A