Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDD6630A, MOSFET

November 2011

2011 Fairchild Semiconductor Corporation FDD6630A Rev D1

FDD6630A

30V N-Channel PowerTrench



MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low RDS( ON) and fast switching speed.

Applications

• DC/DC converter

• Motor drives

Features

• 21 A, 30 V R

DS(ON)

= 35 mΩ @ V

= 10 V

DS(ON)

= 50 mΩ @ V

= 4.5 V

• Low gate charge (5nC typical)

• Fast switching

• High performance trench technology for extremely

low R

DS(ON)

TO-252

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 30 V

GSS

Gate-Source Voltage ±20 V

Drain Current – Continuous (Note 3) 21 A

– Pulsed (Note 1a) 100

Power Dissipation (Note 1) 28

(Note 1a)

3.2

(Note 1b)

1.3

, T

STG

Operating and Storage Junction Temperature Range –55 to +175 °C

Thermal Characteristics

θJC

Thermal Resistance, Junction-to-Case (Note 1) 4.5 °C/W

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W

θJA

Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W

Package Marking and Ordering Information

Device Marking Device Re el Size Tape width Quantity

FDD6630A FDD6630A 13’’ 16mm 2500 units

FDD6630A

Summary of content (5 pages)

PAGE 1
FDD6630A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. • 21 A, 30 V RDS(ON) = 35 mΩ @ V GS = 10 V RDS(ON) = 50 mΩ @ V GS = 4.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Drain-Source Avalanche Ratings Test Conditions Min Typ Max Units (Note 2) WDSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Single Pulse, V DD = 15 V 55 mJ 7.
PAGE 3
FDD6630A Typical Characteristics 3 40 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = 10V ID, DRAIN CURRENT (A) 6.0V 5.0V 30 4.5V 4.0V 20 3.5V 10 3.0V V GS = 3.0V 2.5 3.5V 2 4.0V 4.5V 1.5 5.0V 6.0V 10V 1 0.5 0 0 1 2 3 4 0 5 5 10 Figure 1. On-Region Characteristics. 20 25 30 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 0.18 ID = 3.8 A I D = 7.6A V GS = 10V 1.
PAGE 4
FDD6630A Typical Characteristics 10 700 V DS = 5V 10V 8 f = 1MHz V GS = 0 V 600 15V CISS CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) ID = 7.6A 6 4 500 400 300 200 COSS 2 100 CRSS 0 0 0 2 4 6 8 10 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 15 20 25 30 Figure 8. Capacitance Characteristics.
PAGE 5
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