Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDD6680AS, MOSFET

FDD6680AS Rev A1(X)

FDD6680AS

30V N-Channel PowerTrench

SyncFET

™

General Description

The FDD6680AS is designed to replace a single

MOSFET and Schottky diode in synchronous DC:DC

power supplies. This 30V MOSFET is designed to

maximize power conversion efficiency, providing a low

DS(ON)

and low gate charge. The FDD6680AS

includes an integrated Schottky diode using Fairchild’s

monolithic SyncFET technology. The performance of

the FDD6680AS as the low-side switch in a

synchronous rectifier is indistinguishable from the

performance of the FDD6680A in parallel with a

Schottky diode.

Applications

• DC/DC converter

• Low side notebook

Features

• 55 A, 30 V R

DS(ON)

max= 10.5 mΩ @ V

= 10 V

DS(ON)

max= 13.0 mΩ @ V

= 4.5 V

• Includes SyncFET Schottky body diode

• Low gate charge (21nC typical)

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

TO-252

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Unit

DSS

Drain-Source Voltage 30 V

GSS

Gate-Source Voltage

±20

Drain Current – Continuous (Note 3) 55 A

– Pulsed (Note 1a) 100

Power Dissipation (Note 1) 60

(Note 1a)

3.1

(Note 1b)

1.3

, T

STG

Operating and Storage Junction Temperature Range –55 to +150

°C

Thermal Characteristics

θJC

Thermal Resistance, Junction-to-Case

(Note 1) 2.1

°C/W

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 40

°C/W

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1b) 96

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDD6680AS FDD6680AS 13’’ 16mm 2500 units

FDD6680AS

April 2008

Summary of content (8 pages)

PAGE 1
FDD6680AS tm ® ™ 30V N-Channel PowerTrench SyncFET General Description Features The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 54 205 mJ 13.5 A Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Single Pulse, VDD = 15 V, ID=13.
PAGE 3
TA = 25°C unless otherwise noted Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3.
PAGE 4
FDD6680AS Typical Characteristics 100 2 VGS = 10V VGS = 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.0V ID, DRAIN CURRENT (A) 80 6.0V 4.5V 3.5V 60 40 3.0V 20 2.5V 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 3.5V 1.4 4.0V 4.5V 1.2 5.0V 6.0V 10V 1 0 3 Figure 1. On-Region Characteristics. 20 40 60 ID, DRAIN CURRENT (A) 80 100 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.032 1.6 ID = 12.
PAGE 5
1800 ID = 12.5A f = 1MHz VGS = 0 V VDS = 10V 1500 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 15V 4 1200 Ciss 900 600 Coss 2 300 0 Crss 0 0 5 10 15 20 25 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 30 Figure 8. Capacitance Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 1000 100 100us 1ms 10ms 100ms 1s 10s RDS(ON) LIMIT 10 1 DC VGS = 10V SINGLE PULSE RθJA = 96oC/W 0.1 o TA = 25 C 0.01 0.01 0.
PAGE 6
FDD6680AS Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Current: 3A/div Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDD6680AS. Schottky barrie diodes exhibit significant leakage at high temperature and high reverse voltage.
PAGE 7
FDD6680AS Typical Characteristics L VDS VGS RGE VGS BVDSS tP + DUT VDS IAS VDD VDD - 0V tp vary tP to obtain required peak IAS IAS 0.01Ω tAV Figure 12. Unclamped Inductive Load Test Circuit Figure 13. Unclamped Inductive Waveforms Drain Current Same type as + 50kΩ 10V - 10µF + 1µF VDD - VGS QG(TOT) 10V DUT QGD QGS VGS Ig(REF Charge, (nC) Figure 14. Gate Charge Test Circuit VDS tON td(ON) RL VDS tr 90% tOFF td(OFF tf ) 90% + VGS RGEN Figure 15.
PAGE 8
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