Datasheet

May 2011
2011 Fairchild Semiconductor Corporation
FDD6685 Rev D1
FDD6685
30V P-Channel PowerTrench

MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Features
• –40 A, –30 V. R
DS(ON)
= 20 mΩ @ V
GS
= –10 V
R
DS(ON)
= 30 mΩ @ V
GS
= –4.5 V
• Fast switching speed
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability
• Qualified to AEC Q101
G
S
D
TO-252
S
G
D
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage
–30
V
V
GSS
Gate-Source Voltage
±25
V
I
D
–40
–11
Continuous Drain Current @T
C
=25°C (Note 3)
@T
A
=25°C (Note 1a)
Pulsed, PW ≤ 100µs (Note 1b)
–100
A
Power Dissipation for Single Operation (Note 1) 52
(Note 1a)
3.8
P
D
(Note 1b)
1.6
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +175
°C
Thermal Characteristics
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 2.9
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 40
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1b) 96
°C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry.
For a copy of the requirements, see AEC Q101 at http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDD
6685