Datasheet

©2009 Fairchild Semiconductor Corporation
FDD6760A Rev.C
www.fairchildsemi.com
1
FDD6760A N-Channel Power Trench
®
MOSFET
January 2009
G
S
D
TO-252
D-PAK
(
TO-252
)
D
G
S
FDD6760A
N-Channel PowerTrench
®
MOSFET
25 V, 3.2 mΩ
Features
 Max r
DS(on)
= 3.2 mΩ at V
GS
= 10 V, I
D
= 27 A
 Max r
DS(on)
= 6.0 mΩ at V
GS
= 4.5 V, I
D
= 21 A
 100% UIL test
 RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low r
DS(on)
and fast
switching speed.
Applications
 Vcore DC-DC for Desktop Computers and Servers
 VRM for Intermediate Bus Architecture
MOSFET Maximum Ratings T
C
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 25 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25 °C 50
A
-Continuous (Silicon limited) T
C
= 25 °C 131
-Continuous T
A
= 25 °C (Note 1a) 27
-Pulsed 200
E
AS
Single Pulse Avalanche Energy (Note 3) 72 mJ
P
D
Power Dissipation T
C
= 25 °C 65
W
Power Dissipation T
A
= 25 °C (Note 1a) 3.7
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +175 °C
R
θJC
Thermal Resistance, Junction to Case 2.3
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 40
Device Marking Device Package Reel Size Tape Width Quantity
FDD6760A FDD6760A D-PAK (TO-252) 13 ’’ 12 mm 2500 units