Datasheet

January 2009
©2009 Fairchild Semiconductor Corporation
FDD6780A / FDU6780A_F071 Rev.C
www.fairchildsemi.com
1
FDD6780A / FDU6780A_F071 N-Channel Power Trench
®
MOSFET
D
G
S
D
G
S
G
D
S
D-PAK
(TO-252)
Short-Lead I-PAK
(TO-251AA)
FDD6780A / FDU6780A_F071
N-Channel PowerTrench
®
MOSFET
25 V, 8.6 mΩ
Features
 Max r
DS(on)
= 8.6 mΩ at V
GS
= 10 V, I
D
= 16.4 A
 Max r
DS(on)
= 19.0 mΩ at V
GS
= 4.5 V, I
D
= 12.2 A
 100% UIL test
 RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low r
DS(on)
and fast
switching speed.
Applications
 Vcore DC-DC for Desktop Computers and Servers
 VRM for Intermediate Bus Architecture
MOSFET Maximum Ratings T
C
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 25 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25 °C 30
A
-Continuous (Silicon limited) T
C
= 25 °C 48
-Continuous T
A
= 25 °C (Note 1a) 16.4
-Pulsed 100
E
AS
Single Pulse Avalanche Energy (Note 3) 24 mJ
P
D
Power Dissipation T
C
= 25 °C 32.6
W
Power Dissipation T
A
= 25 °C (Note 1a) 3.7
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +175 °C
R
θJC
Thermal Resistance, Junction to Case TO-252, TO-251 4.6
°C/W
R
θJA
Thermal Resistance, Junction to Ambient TO-252 (Note 1a) 40
Device Marking Device Package Reel Size Tape Width Quantity
FDD6780A FDD6780A D-PAK (TO-252) 13 ’’ 12 mm 2500 units
FDU6780A FDU6780A_F071 TO-251AA N/A(Tube) N/A 75 units