Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDD6N50TM_WS, MOSFET

November 2013

FDD6N50 / FDU6N50 — N-Channel UniFET

MOSFET

FDD6N50 / FDU6N50 Rev. C1

www.fairchildsemi.com

FDD6N50 / FDU6N50

N-Channel UniFET

MOSFET

500 V, 6 A, 900 mΩ

Features

•R

DS(on)

= 900 mΩ (Max.) @ V

= 10 V, I

= 3 A

• Low Gate Charge (Typ. 12.8 nC)

•Low C

rss

(Typ. 9 pF)

• 100% Avalanche Tested

• Improved dv/dt Capability

Applications

• LCD/LED/PDP TV

• Lighting

• Uninterruptible Power Supply

• AC-DC Power Supply

Description

UniFET

MOSFET is Fairchild Semiconductor’s high voltage

MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to

provide better switching performance and higher avalanche

energy strength. This device family is suitable for switching

power converter applications such as power factor correction

(PFC), flat panel display (FPD) TV power, ATX and electronic

lamp ballasts.

I-PAK

D-PAK

Absolute Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter

FDD6N50TM /

FDD6N50TM_WS /

FDU6N50TU Unit

DSS

Drain-Source Voltage 500 V

Drain Current - Continuous (T

= 25°C)

- Continuous (T

= 100°C)

3.8

Drain Current - Pulsed

(Note 1)

24 A

GSS

Gate-Source voltage ±30 V

Single Pulsed Avalanche Energy

(Note 2)

270 mJ

Avalanche Current

(Note 1)

Repetitive Avalanche Energy

(Note 1)

8.9 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

4.5 V/ns

Power Dissipation (T

= 25°C)

- Derate Above 25°C

0.71

W/°C

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering, 1/8” from Case for

5 Seconds

300 °C

Symbol Parameter

FDD6N50TM /

FDD6N50TM_WS /

FDU6N50TU Unit

θJC

Thermal Resistance, Junction-to-Case, Max. 1.4

°C/W

θJA

Thermal Resistance, Junction-to-Ambient, Max. 83

Summary of content (9 pages)

PAGE 1
FDD6N50 / FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 mΩ Features Description • RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.
PAGE 2
Part Number FDD6N50TM Top Mark FDD6N50 Package DPAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units FDD6N50TM_WS FDD6N50S DPAK Tape and Reel 330 mm 16 mm 2500 units FDU6N50TU FDU6N50 IPAK Tube N/A N/A 75 units Electrical Characteristics Symbol TC = 25°C unless otherwise noted. Parameter Conditions Min. Typ.
PAGE 3
Figure 1. On-Region Characteristics Top : ID, Drain Current [A] 15 Bottom : VGS 10.0 V 8.0V 7.5 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V 1 10 ID , Drain Current [A] 20 Figure 2. Transfer Characteristics 10 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ 5 0 0 10 20 30 40 150℃ 0 10 25℃ -55℃ -1 10 ※ Note 1. VDS = 40V 2. 250μ s Pulse Test -2 50 10 2 VDS, Drain-Source Voltage [V] 8 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 2.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ♦ Notes : 0.9 1. VGS = 0 V 2. ID = 250 μA 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ♦ Notes : 0.5 1. VGS = 10 V 2. ID = 3 A 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 2 100 150 200 o Figure 9.
PAGE 5
0KΩ 200nF 12V FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 13. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp tp Time Figure 14.
PAGE 6
FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15.
PAGE 7
FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 17. TO-251 (I-PAK), Molded, 3-Lead, Option AA Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.