Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDD7N20TM, MOSFET

November 2013

FDD7N20TM — N-Channel UniFET

MOSFET

FDD7N20TM Rev. C1

www.fairchildsemi.com

FDD7N20TM

N-Channel UniFET

MOSFET

200 V, 5 A, 690 mΩ

Features

•R

DS(on)

= 580 mΩ (Typ.) @ V

= 10 V, I

= 2.5 A

• Low Gate Charge (Typ. 5 nC)

• Low C

rss

(Typ. 5 pF)

• 100% Avalanche Tested

• RoHS Compliant

Applications

• LCD/LED/PDP TV

• Consumer Appliances

• Lighting

• Uninterruptible Power

• AC-DC Power Supply

Description

UniFET

MOSFET is Fairchild Semiconductor’s high voltage

MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to

provide better switching performance and higher avalanche en-

ergy strength. This device family is suitable for switching power

converter applications such as power factor correction (PFC),

flat panel display (FPD) TV power, ATX and electronic lamp bal-

lasts.

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FDD7N20TM Unit

DSS

Drain to Source Voltage 200 V

GSS

Gate to Source Voltage ±30 V

D r a i n C u r r e n t

- Continuous (T

= 25

C) 5

- Continuous (T

= 100

C) 3

D r a i n C u r r e n t - P u l s e d (Note 1) 15 A

Single Pulsed Avalanche Energy (Note 2) 62.5 mJ

Avalanche Current (Note 1) 5 A

Repetitive Avalanche Energy (Note 1) 4.3 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

Power Dissipation

= 25

C) 43 W

- Derate Above 25

C0.34W/

, T

STG

Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds

300

Symbol Parameter FDD7N20TM Unit

θJC

Thermal Resistance, Junction to Case, Max. 2.9

C/W

θJA

Thermal Resistance, Junction to Ambient, Max. 110

D-PAK

Summary of content (8 pages)

PAGE 1
FDD7N20TM N-Channel UniFETTM MOSFET 200 V, 5 A, 690 mΩ Features Description • RDS(on) = 580 mΩ (Typ.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.
PAGE 2
Part Number Top Mark FDD7N20 FDD7N20TM Electrical Characteristics Symbol Package DPAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units TC = 25oC unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 200 - - V - 0.
PAGE 3
Figure 1. On-Region Characteristics 20 20 VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID,Drain Current[A] 10 ID,Drain Current[A] Figure 2. Transfer Characteristics 1 0.1 o 150 C o 25 C o -55 C * Notes : 1. 250μs Pulse Test * Notes : 1. VDS = 25V 2. 250μs Pulse Test o 0.01 0.04 2. TC = 25 C 0.1 1 VDS,Drain-Source Voltage[V] 10 1 25 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 8 10 VGS,Gate-Source Voltage[V] 12 Figure 4.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 * Notes : 1. VGS = 0V 2. ID = 250μA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.0 -100 200 Figure 9.
PAGE 5
FDD7N20TM — N-Channel UniFETTM MOSFET IG = const. Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 13. Resistive Switching Test Circuit & Waveforms VGS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2007 Fairchild Semiconductor Corporation FDD7N20TM Rev. C1 5 www.fairchildsemi.
PAGE 6
FDD7N20TM — N-Channel UniFETTM MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15.
PAGE 7
FDD7N20TM — N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.