Datasheet

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November 2013

FDD7N25LZ — N-Channel UniFET

MOSFET

FDD7N25LZ Rev. C1

www.fairchildsemi.com

FDD7N25LZ

N-Channel UniFET

MOSFET

250 V, 6.2 A, 550 mΩ

Features

•R

DS(on)

= 430 mΩ (Typ.) @ V

= 10 V, I

= 3.1 A

• Low Gate Charge (Typ. 12 nC)

• Low C

rss

(Typ. 8 pF)

• 100% Avalanche Tested

• Improved dv/dt Capability

• ESD Improved Capability

• RoHS Compliant

Applications

• LCD/LED/PDP TV

• Consumer Appliances

• Lighting

• Uninterruptible Power Supply

• AC-DC Power Supply

Description

UniFET

MOSFET is Fairchild Semiconductor’s high voltage

MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to

provide better switching performance and higher avalanche en-

ergy strength. This device family is suitable for switching power

converter applications such as power factor correction (PFC),

flat panel display (FPD) TV power, ATX and electronic lamp bal-

lasts.

D-PAK

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FDD7N25LZTM Unit

DSS

Drain to Source Voltage 250 V

GSS

Gate to Source Voltage ±20 V

Drain Current

- Continuous (T

= 25

C) 6.2

- Continuous (T

= 100

C) 3.7

Drain Current - Pulsed (Note 1) 25 A

Single Pulsed Avalanche Energy (Note 2) 115 mJ

Avalanche Current (Note 1) 5.5 A

Repetitive Avalanche Energy (Note 1) 5.6 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns

Power Dissipation

= 25

C) 56 W

- Derate Above 25

C0.45W/

, T

STG

Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds

300

Symbol Parameter

FDD7N25LZTM

Unit

θJC

Thermal Resistance, Junction to Case, Max. 2.2

C/W

θJA

Thermal Resistance, Junction to Ambient, Max. 110

Summary of content (8 pages)

PAGE 1
FDD7N25LZ N-Channel UniFETTM MOSFET 250 V, 6.2 A, 550 mΩ Features Description • RDS(on) = 430 mΩ (Typ.) @ VGS = 10 V, ID = 3.1 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.
PAGE 2
Part Number FDD7N25LZTM Top Mark FDD7N25LZ Package DPAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 250 - - V - 0.
PAGE 3
Figure 1. On-Region Characteristics ID, Drain Current[A] 10 Figure 2. Transfer Characteristics 30 VGS = 10.0V 7.0V 5.0V 3.5V 3.0V 2.5V 10 ID, Drain Current[A] 20 1 0.1 o o 150 C 25 C o -55 C 1 * Notes : 1. VDS = 20V 2. 250μs Pulse Test *Notes: 1. 250μs Pulse Test o 0.03 0.03 2. TC = 25 C 0.1 0.1 1 VDS, Drain-Source Voltage[V] 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2 3 4 VGS, Gate-Source Voltage[V] IS, Reverse Drain Current [A] 100 1.2 0.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 -80 * Notes : 1. VGS = 0V 2. ID = 250uA -40 0 40 80 120 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10V 2. ID = 3.1A 0.5 0 -80 160 Figure 9. Maximum Safe Operating Area -40 0 40 80 120 o TJ, Junction Temperature [ C] 160 Figure 10.
PAGE 5
FDD7N25LZ — N-Channel UniFETTM MOSFET IG = const. Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 13. Resistive Switching Test Circuit & Waveforms VGS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2010 Fairchild Semiconductor Corporation FDD7N25LZ Rev. C1 5 www.fairchildsemi.
PAGE 6
FDD7N25LZ — N-Channel UniFETTM MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15.
PAGE 7
FDD7N25LZ — N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.