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November 2013

FDD7N60NZ / FDU7N60NZTU — N-Channel UniFET

II MOSFET

FDD7N60NZ / FDU7N60NZTU Rev. C1

www.fairchildsemi.com

FDD7N60NZ / FDU7N60NZTU

N-Channel UniFET

II MOSFET

600 V, 5.5 A, 1.25 Ω

Features

•R

DS(on)

= 1.05 Ω (Typ.) @ V

= 10 V, I

= 2.75 A

• Low Gate Charge (Typ. 13 nC)

• Low C

rss

(Typ. 7 pF)

• 100% Avalanche Tested

• Improved dv/dt Capability

• ESD Improved Capability

• RoHS Compliant

Applications

• Lighting

• Uninterruptible Power Supply

Description

UniFET

II MOSFET is Fairchild Semiconductor’s high voltage

MOSFET family based on advanced planar stripe and DMOS

technology. This advanced MOSFET family has the smallest on-

state resistance among the planar MOSFET, and also provides

superior switching performance and higher avalanche energy

strength. In addition, internal gate-source ESD diode allows

UniFET

II MOSFET to withstand over 2kV HBM surge stress.

This device family is suitable for switching power converter appli-

cations such as power factor correction (PFC), flat panel display

(FPD) TV power, ATX and electronic lamp ballasts.

I-PAK

D-PAK

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter

FDD7N60NZTM/

FDU7N60NZTU

Unit

DSS

Drain to Source Voltage 600 V

GSS

Gate to Source Voltage ±25 V

Drain Current

- Continuous (T

= 25

C) 5.5

- Continuous (T

= 100

C) 3.3

Drain Current - Pulsed (Note 1) 22 A

Single Pulsed Avalanche Energy (Note 2) 347 mJ

Avalanche Current (Note 1) 5.5 A

Repetitive Avalanche Energy (Note 1) 12.5 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns

Power Dissipation

= 25

C) 90 W

- Derate Above 25

C0.7W/

, T

STG

Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds

300

Symbol Parameter

FDD7N60NZTM/

FDU7N60NZTU

Unit

θJC

Thermal Resistance, Junction to Case, Max. 1.4

C/W

θJA

Thermal Resistance, Junction to Ambient, Max. 90

Summary of content (9 pages)

PAGE 1
FDD7N60NZ / FDU7N60NZTU N-Channel UniFETTM II MOSFET 600 V, 5.5 A, 1.25 Ω Features Description • RDS(on) = 1.05 Ω (Typ.) @ VGS = 10 V, ID = 2.75 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest onstate resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength.
PAGE 2
Part Number FDD7N60NZTM Top Mark FDD7N60NZ Package DPAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units FDU7N60NZTU FDU7N60NZ IPAK Tube N/A N/A 75 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 600 - - V - 0.
PAGE 3
Figure 1. On-Region Characteristics 20 20 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V *Notes: 1. VDS = 20V 2. 250μs Pulse Test 10 ID, Drain Current[A] 10 ID, Drain Current[A] Figure 2. Transfer Characteristics 1 o 150 C o 25 C 1 o -55 C *Notes: 1. 250μs Pulse Test o 0.1 0.1 2. TC = 25 C 1 10 VDS, Drain-Source Voltage[V] 0.1 30 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 VGS, Gate-Source Voltage[V] 100 IS, Reverse Drain Current [A] 1.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.0 -100 200 Figure 9.
PAGE 5
FDD7N60NZ / FDU7N60NZTU — N-Channel UniFETTM II MOSFET IG = const. Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 13. Resistive Switching Test Circuit & Waveforms VGS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDD7N60NZ / FDU7N60NZTU Rev. C1 5 www.fairchildsemi.
PAGE 6
FDD7N60NZ / FDU7N60NZTU — N-Channel UniFETTM II MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15.
PAGE 7
FDD7N60NZ / FDU7N60NZTU — N-Channel UniFETTM II MOSFET Mechanical Dimensions Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
FDD7N60NZ / FDU7N60NZTU — N-Channel UniFETTM II MOSFET Mechanical Dimensions Figure 17. TO-251 (I-PAK), Molded, 3-Lead, Option AA Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.