Datasheet

FDD8424H Dual N & P-Channel PowerTrench
®
MOSFET
www.fairchildsemi.com
2
©2013 Fairchild Semiconductor Corporation
FDD8424H Rev.C2
Electrical Characteristics T
J
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250μA, V
GS
= 0V
I
D
= -250μA, V
GS
= 0V
Q1
Q2
40
-40
V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250μA, referenced to 25°C
I
D
= -250μA, referenced to 25°C
Q1
Q2
34
-32
mV/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 32V, V
GS
= 0V
V
DS
= -32V, V
GS
= 0V
Q1
Q2
1
-1
μA
I
GSS
Gate to Source Leakage Current V
GS
= ±20V, V
DS
= 0V
Q1
Q2
±100
±100
nA
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250μA
V
GS
= V
DS
, I
D
= -250μA
Q1
Q2
1
-1
1.7
-1.6
3
-3
V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250μA, referenced to 25°C
I
D
= -250μA, referenced to 25°C
Q1
Q2
-5.3
4.8
mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10V, I
D
= 9.0A
V
GS
= 4.5V, I
D
= 7.0A
V
GS
= 10V, I
D
= 9.0A, T
J
= 125°C
Q1
19
23
29
24
30
37
mΩ
V
GS
= -10V, I
D
= -6.5A
V
GS
= -4.5V, I
D
= -5.6A
V
GS
= -10V, I
D
= -6.5A, T
J
= 125°C
Q2
42
58
62
54
70
80
g
FS
Forward Transconductance
V
DS
= 5V, I
D
= 9.0A
V
DS
= -5V, I
D
= -6.5A
Q1
Q2
29
13
S
Dynamic Characteristics
C
iss
Input Capacitance
Q1
V
DS
= 20V, V
GS
= 0V, f = 1MHZ
Q2
V
DS
= -20V, V
GS
= 0V, f = 1MHZ
Q1
Q2
750
1000
1000
1330
pF
C
oss
Output Capacitance
Q1
Q2
115
140
155
185
pF
C
rss
Reverse Transfer Capacitance
Q1
Q2
75
75
115
115
pF
R
g
Gate Resistance f = 1MHz
Q1
Q2
0.1
0.1
1.1
3.3
3.3
9.9
Ω
Switching Characteristics
t
d(on)
Turn-On Delay Time
Q1
V
DD
= 20V, I
D
= 9.0A,
V
GS
= 10V, R
GEN
= 6Ω
Q2
V
DD
= -20V, I
D
= -6.5A,
V
GS
= -10V, R
GEN
= 6Ω
Q1
Q2
7
7
14
14
ns
t
r
Rise Time
Q1
Q2
13
3
24
10
ns
t
d(off)
Turn-Off Delay Time
Q1
Q2
17
20
31
36
ns
t
f
Fall Time
Q1
Q2
6
3
12
10
ns
Q
g(TOT)
Total Gate Charge
Q1
V
GS
= 10V, V
DD
= 20V, I
D
= 9.0A
Q2
V
GS
= -10V, V
DD
= -20V, I
D
= -6.5A
Q1
Q2
14
17
20
24
nC
Q
gs
Gate to Source Charge
Q1
Q2
2.3
3.0
nC
Q
gd
Gate to Drain “Miller” Charge
Q1
Q2
3.2
3.6
nC