Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDD8444_F085, MOSFET

June 2007

FDD8444 N-Channel PowerTrench

MOSFET

FDD8444 Rev B (W)

www.fairchildsemi.com1

FDD8444

N-Channel PowerTrench

MOSFET

40V, 50A, 5.2mΩ

Features

 Typ r

DS(on)

= 4mΩ at V

= 10V, I

= 50A

 Typ Q

g(10)

= 89nC at V

= 10V

 Low Miller Charge

 Low Q

Body Diode

 UIS Capability (Single Pulse/ Repetitive Pulse)

 Qualified to AEC Q101

 RoHS Compliant

Applications

 Automotive Engine Control

 Powertrain Management

 Solenoid and Motor Drivers

 Electronic Transmission

 Distributed Power Architecture and VRMs

 Primary Switch for 12V Systems

Summary of content (7 pages)

PAGE 1
FDD8444 tm ® N-Channel PowerTrench MOSFET 40V, 50A, 5.
PAGE 2
Symbol VDSS Drain to Source Voltage VGS Parameter Gate to Source Voltage Drain Current Continuous (VGS = 10V) ID (Note 1) PD Units V ±20 V 145 Continuous (VGS = 10V, with RθJA = 52oC/W) 20 Pulsed EAS Ratings 40 A Figure 4 Single Pulse Avalanche Energy (Note 2) 535 mJ Power Dissipation 153 W Derate above 25oC 1.
PAGE 3
Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton Turn-On Time - - 135 ns td(on) Turn-On Delay Time - 12 - ns tr Turn-On Rise Time - 78 - ns td(off) Turn-Off Delay Time - 48 - ns tf Turn-Off Fall Time - 15 - ns toff Turn-Off Time - - 95 ns ISD = 50A - 0.9 1.25 ISD = 25A - 0.8 1.
PAGE 4
160 POWER DISSIPATION MULIPLIER 1.2 ID, DRAIN CURRENT (A) 1.0 VGS = 10V CURRENT LIMITED BY PACKAGE 140 120 0.8 100 0.6 0.4 0.2 0.0 80 60 40 20 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 0 25 175 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) Figure 1. Normalized Power Dissipation vs Case Temperature Figure 2. Maximum Continuous Drain Current vs Case Temperature 2 DUTY CYCLE - DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJC 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.
PAGE 5
00 10us IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 100us 10 CURRENT LIMITED BY PACKAGE 1 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 1ms SINGLE PULSE TJ = MAX RATED 10ms TC = 25oC 100 STARTING TJ = 25oC 10 STARTING TJ = 150oC DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 1 0.01 100 0.
PAGE 6
1.2 1.15 NORMALIZED GATE THRESHOLD VOLTAGE 1.1 1.10 1.0 0.9 1.05 0.8 1.00 0.7 0.6 0.95 0.5 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.90 -80 200 10000 Ciss Coss 1000 Crss f = 1MHz VGS = 0V 100 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 Figure 13. Capacitance vs Drain to Source Voltage FDD8444 Rev B (W) -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 12.
PAGE 7
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