Datasheet

FDD8444 N-Channel PowerTrench
®
MOSFET
FDD8444 Rev B (W) www.fairchildsemi.com6
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source Voltage
Typical Characteristics
-80 -40 0 40 80 120 160 200
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V
GS
= V
DS
I
D
= 250μA
NORMALIZED GATE
THRESHOLD VOLTAGE
T
J
, JUNCTION TEMPERATURE(
o
C)
-80 -40 0 40 80 120 160 200
0.90
0.95
1.00
1.05
1.10
1.15
I
D
= 250μA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
T
J
, JUNCTION TEMPERATURE (
o
C)
0.1 1 10
100
1000
10000
f = 1MHz
V
GS
= 0V
C
rss
C
oss
C
iss
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
40
0 20406080100
0
2
4
6
8
10
ID = 50A
V
DD
= 25V
V
DD
= 20V
V
GS
, GATE TO SOURCE VOLTAGE(V)
Q
g
, GATE CHARGE(nC)
V
DD
= 15V