Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDD8445, MOSFET

July 2014

FDD8445 N-Channel PowerTrench

MOSFET

FDD8445 Rev A1 (W)

www.fairchildsemi.com1

FDD8445

N-Channel PowerTrench

MOSFET

40V, 50A, 8.7mΩ

Features

 R

DS(ON)

= 6.7 mΩ (Typ), V

= 10V, I

=50A

 Q

g(10)

= 45nC (Typ), V

=10V

 Low Miller Charge

 Low Qrr Body Diode

 UIS Capability (Single Pulse/ Repetitive Pulse)

 RoHS Compliant

Applications

 Powertrain Management

 Electronic Transmission

 Distributed Power Architecture and VRMs

 Primary Switch for 12V Systems



Summary of content (8 pages)

PAGE 1
tm FDD8445 N-Channel PowerTrench® MOSFET 40V, 50A, 8.7mΩ Features Applications RDS(ON) = 6.
PAGE 2
Symbol VDSS Drain to Source Voltage Parameter Ratings 40 Units V VGS Gate to Source Voltage ±20 V 70 A 15.2 A Drain Current Continuous (VGS=10v) (Note 1) Continuous (VGS=10v,with RθJA = 52oC/W) ID Pulsed EAS PD TJ, TSTG Figure 4 Single Pulse Avalanche Energy (Note 2) 144 Power Dissipation 79 W Derate above 25oC 0.
PAGE 3
Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t(on) Turn-On Time - - 138 ns td(on) Turn-On Delay Time - 10 - ns tr Turn-On Rise Time - 82 - ns td(off) Turn-Off Delay Time - 26 - ns tf Turn-Off Fall Time - 9.6 - ns toff Turn-Off Time - - 53 ns V VDD = 20V, ID = 50A VGS = 10V, RGS = 2Ω Drain-Source Diode Characteristics ISD=50A - - 1.25 ISD=25A - - 1.
PAGE 4
80 VGS=10V CURRENT LIMITED BY PACKAGE 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 60 40 20 0.2 0.0 0 25 50 75 100 125 150 0 25 175 o TC , CASE TEMPERATURE( C) Figure 1. Normalized Power Dissipation vs Case Temperature 50 75 100 125 o TC, CASE TEMPERATURE( C) 150 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature 2 DUTY CYCLE - DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJC 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.
PAGE 5
200 1000 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 100 100us 10 CURRENT LIMITED BY PACKAGE 1 0.1 1 1ms OPERATION IN THIS SINGLE PULSE AREA MAY BE TJ = MAX RATED LIMITED BY rDS(ON) TC = 25oC 10ms DC 10 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 10us O STARTING TJ = 25 C 10 O STARTING TJ = 150 C 1 0.01 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0.
PAGE 6
1.10 1.2 1.1 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS=VDS NORMALIZED GATE THRESHOLD VOLTAGE ID =250μA 1.0 0.9 0.8 0.7 0.6 0.5 -80 -40 0 40 80 120 160 o TJ, JUNCTION TEMPERATURE ( C) 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 1.00 0.95 0.90 -80 -40 0 40 80 120 160 o TJ, JUNCTION TEMPERATURE ( C) 200 10 1000 VGS, GATE TO SOURCE VOLTAGE(V) f = 1MHz VGS = 0V CISS CAPACITANCE (pF) 1.05 Figure 12.
PAGE 7
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