Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDD8447L_F085, MOSFET

February 2009

FDD8447L_F085 N-Channel PowerTrench

MOSFET

FDD8447L_F085 Rev. A1

www.fairchildsemi.com1

FDD8447L_F085

N-Channel PowerTrench

MOSFET

40V, 50A, 11.0mΩ

Features

 Typ r

DS(on)

= 7.0mΩ at V

= 10V, I

= 14A

 Typ r

DS(on)

= 8.5mΩ at V

= 4.5V, I

= 11A

 Fast Switching

 Qualified to AEC Q101

 RoHS Compliant

Applications

 Inverter

 Power Supplies

 Automotive Engine Control

 Power Train Management

 Solenoid and Motor Drivers

 Electronic Transmission

 Primary Switch for 12V and 24V Systems

TO-252

D-PAK

(

TO-252

)

Summary of content (7 pages)

PAGE 1
FDD8447L_F085 N-Channel PowerTrench® MOSFET 40V, 50A, 11.0mΩ Features Applications Typ rDS(on) = 7.0mΩ at VGS = 10V, ID = 14A Inverter Typ rDS(on) = 8.5mΩ at VGS = 4.
PAGE 2
Symbol Drain to Source Voltage VDSS VGS ID EAS PD Parameter Ratings 40 Units V Gate to Source Voltage ±20 V Drain Current Continuous (TC < 80oC, VGS = 10V) 50 (Note 1) Pulsed A See Figure 4 Single Pulse Avalanche Energy (Note 2) 40 mJ Power Dissipation 65 W Dreate above 25oC 0.43 W/oC TJ, TSTG Operating and Storage Temperature o -55 to + 175 C Thermal Characteristics RθJC Maximum Thermal Resistance Junction to Case 2.
PAGE 3
Symbol Parameter Test Conditions Min Typ Max Units - 12 21 ns - 12 21 ns - 38 61 ns - 9 18 ns - 0.8 1.
PAGE 4
70 1.0 60 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) VGS = 10V 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE - DESCENDING ORDER 1 NORMALIZED THERMAL IMPEDANCE, ZθJC 50 175 Figure 1. Normalized Power Dissipation vs Case Temperature 2 CURRENT LIMITED BY PACKAGE D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 0.
PAGE 5
400 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 1 1ms 10ms DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 0.001 100 0.01 0.
PAGE 6
1.15 VGS = VDS ID = 250µA 1.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.4 1.0 0.8 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 4000 CAPACITANCE (pF) Ciss 1000 Coss f = 1MHz VGS = 0V 100 0.1 Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 80 Figure 13. Capacitance vs Drain to Source Voltage FDD8447L_F085 Rev. A1 1.10 1.05 1.00 0.95 0.90 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 12.
PAGE 7
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