Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDD8447L, MOSFET

May 2008

FDD8447L 40V N-Channel PowerTrench

MOSFET

FDD8447L Rev.C3

www.fairchildsemi.com

FDD8447L

40V N-Channel PowerTrench

MOSFET

40V, 50A, 8.5mΩ

Features

 Max r

DS(on)

= 8.5mΩ at V

= 10V, I

= 14A

 Max r

DS(on)

= 11.0mΩ at V

= 4.5V, I

= 11A

 Fast Switching

 RoHS Compliant

General Description

This N-Channel MOSFET has been produced using Fairchild

Semiconductor’s proprietary PowerTrench

technology to

deliver low r

DS(on)

and optimized BV

DSS

capability to offer

superior performance benefit in the application.

Applications

 Inverter

 Power Supplies

TO-252

D-PAK

(TO-252)

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 40 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) T

= 25°C 50

-Continuous (Silicon limited) T

= 25°C 57

-Continuous T

= 25°C (Note 1a) 15.2

-Pulsed 100

Max Pulse Diode Current 100 A

Drain-Source Avalanche Energy (Note 3) 153 mJ

Power Dissipation T

= 25°C 44

W T

= 25°C (Note 1a) 3.1

= 25°C (Note 1b) 1.3

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case 2.8

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 40

θJA

Thermal Resistance, Junction to Ambient (Note 1b) 96

Device Marking Device Package Reel Size Tape Width Quantity

FDD8447L FDD8447L D-PAK(TO-252) 13’’ 12mm 2500 units

Summary of content (6 pages)

PAGE 1
FDD8447L 40V N-Channel PowerTrench® MOSFET 40V, 50A, 8.5mΩ Features General Description Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application. Max rDS(on) = 11.0mΩ at VGS = 4.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 40 V ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 32V, VGS = 0V 1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VGS = 0V ±100 nA 3.
PAGE 3
VGS = 10V 80 4.0V 6.0V NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 100 4.5V 5.0V 60 3.5V 40 20 3.0V 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 1.8 3.5V 1.4 4.0V 4.5V 5.0V 6.0V 10.0V 1 0 2.5 Figure 1. On-Region Characteristics 40 60 ID, DRAIN CURRENT (A) 80 100 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage ID = 14A VGS = 10V rDS(ON), ON-RESISTANCE (OHM) ID = 7A 1.4 1.2 1 0.8 0.
PAGE 4
3000 VDS = 10V ID = 14A 30V 8 20V 6 4 2 2000 Ciss 1500 1000 Coss 500 Crss 0 0 0 10 20 Qg, GATE CHARGE (nC) 30 40 0 Figure 7. Gate Charge Characteristics 40 100 P(pk), PEAK TRANSIENT POWER (W) 100 100µs RDS(ON) LIMIT 1ms 10ms 10 DC 1 1s 100ms VGS = 10V SINGLE PULSE o RθJA = 96 C/W 0.1 o TA = 25 C 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE RθJA = 96°C/W TA = 25°C 80 60 40 20 0 0.001 100 Figure 9. Maximum Safe Operating Area 0.01 0.
PAGE 5
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 96°C/W 0.2 0.1 0.1 P(pk) 0.05 0.02 0.01 0.001 0.0001 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 13. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD8447L Rev.C3 5 www.
PAGE 6
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