Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDD8451, MOSFET

May 2009

FDD8451 N-Channel PowerTrench

MOSFET

FDD8451 Rev. B2

www.fairchildsemi.com1

FDD8451

N-Channel PowerTrench

MOSFET

40V, 28A, 24m:

Features

 Max r

DS(on)

24m: at V

= 10V, I

= 9A

 Max r

DS(on)

30m: at V

= 4.5V, I

= 7A

 Low gate charge

 Fast Switching

 High performance trench technology for extremely low

DS(on)

 RoHS compliant

General Description

This N-Channel MOSFET has been designed specifically

to improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, fast

switching speed and extremely low r

DS(on)

Application

 DC/DC converter

 Backlight inverter

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

(Note 1a)

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 40 V

Gate to Source Voltage ±20 V

Drain Current -Continuous@T

=25°C 28

A -Continuous @T

=25°C 9

-Pulsed

Single Pulse Avalanche Energy (Note 3)20 mJ

Power Dissipation 30 W

, T

STG

Operating and Storage Temperature -55 to 150 °C

TJC

Thermal Resistance, Junction to Case 4.1 °C/W

TJA

Thermal Resistance, Junction to Ambient (Note 1a) 40 °C/W

TJA

Thermal Resistance, Junction to Ambient (Note 1b) 96 °C/W

Device Marking Device Package Reel Size Tape Width Quantity

FDD8451 FDD8451 D-PAK(TO-252) 13’’ 12mm 2500 units

Summary of content (6 pages)

PAGE 1
FDD8451 N-Channel PowerTrench® MOSFET tm 40V, 28A, 24m: Features General Description Max rDS(on) 24m: at VGS = 10V, ID = 9A Max rDS(on) 30m: at VGS = 4.5V, ID = 7A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, fast switching speed and extremely low rDS(on).
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250PA, VGS = 0V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250PA, referenced to 25°C 40 V IDSS Zero Gate Voltage Drain Current VDS = 32V, VGS = 0V 1 PA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 3 V 33.
PAGE 3
4.0 ID, DRAIN CURRENT (A) VGS = 10V 50 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX VGS = 4V 40 VGS = 4.5V 30 VGS = 3.5V 20 10 VGS = 3V 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 3V 2.5 VGS = 3.5V 2.0 VGS = 4V 1.5 VGS = 5V 1.0 VGS = 10V 0.5 0 10 20 30 40 ID, DRAIN CURRENT(A) 50 60 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 160 ID = 9A VGS = 10V 1.
PAGE 4
3000 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 15V VDD = 20V 6 VDD = 25V 4 Coss 100 Crss 2 f = 1MHz VGS = 0V 0 0 4 8 12 Qg, GATE CHARGE(nC) 10 0.1 16 Figure 7. Gate Charge Characteristics 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 30 TJ = 25oC 10 TJ = 125oC TJ = 150oC 1 1E-3 0.01 0.1 25 VGS = 10V 20 15 VGS =4.5V 10 5 1 10 0 100 o RTJC = 4.
PAGE 5
2 NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.005 -5 10 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJC x RTJC + TC SINGLE PULSE -4 10 -3 -2 10 10 -1 10 0 10 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDD8451 Rev. B2 5 www.fairchildsemi.
PAGE 6
tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.