Datasheet

tm
September 2007
©2007 Fairchild Semiconductor Corporation
FDD8453LZ Rev.C
www.fairchildsemi.com
1
FDD8453LZ N-Channel PowerTrench
®
MOSFET
FDD8453LZ
N-Channel PowerTrench
®
MOSFET
40V, 50A, 6.7mΩ
Features
 Max r
DS(on)
= 6.7mΩ at V
GS
= 10V, I
D
= 15A
 Max r
DS(on)
= 8.7mΩ at V
GS
= 4.5V, I
D
= 13A
 HBM ESD protection level >7kV typical (Note 4)
 RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
®
process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Applications
 Inverter
 Synchronous Rectifier
MOSFET Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 40 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25°C 50
A
-Continuous (Silicon limited) T
C
= 25°C 75
-Continuous T
A
= 25°C (Note 1a) 16.4
-Pulsed 100
E
AS
Single Pulse Avalanche Energy (Note 3) 253 mJ
P
D
Power Dissipation T
C
= 25°C 65
W
Power Dissipation T
A
= 25°C (Note 1a) 3.1
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 1.9
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 40
Device Marking Device Package Reel Size Tape Width Quantity
FDD8453LZ FDD8453LZ D-PAK (TO-252) 13’’ 12mm 2500 units
G
S
D
TO-252
D-PAK
(
TO-252
)
D
S
G